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SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20190106787A1
  • Filed: 12/07/2018
  • Published: 04/11/2019
  • Est. Priority Date: 06/07/2016
  • Status: Active Grant
First Claim
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1. A substrate processing apparatus comprising:

  • a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube;

    a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube;

    a gas supply system provided at an upstream side of the nozzle;

    a blocking part provided at a boundary between the gas supply system and the nozzle; and

    a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

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