SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A substrate processing apparatus comprising:
- a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube;
a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube;
a gas supply system provided at an upstream side of the nozzle;
a blocking part provided at a boundary between the gas supply system and the nozzle; and
a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.
1 Assignment
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Accused Products
Abstract
There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.
12 Citations
12 Claims
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1. A substrate processing apparatus comprising:
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a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle. - View Dependent Claims (2, 3, 4, 5, 11)
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6. A substrate processing apparatus comprising:
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a first nozzle and a second nozzle provided at a furnace opening part and extending from the furnace opening part to an inside of a reaction tube; a first gas supply system provided at an upstream side of the first nozzle; a second gas supply system provided at an upstream side of the second nozzle; a first blocking part provided at a boundary between the first gas supply system and the first nozzle; a second blocking part provided at a boundary between the second gas supply system and the second nozzle; a controller configured to control the first gas supply system, the first blocking part, the second gas supply system and the second blocking part such that the first gas supply system co-operates with the first blocking part to supply a first gas into the reaction tube and the second gas supply system co-operates with the second blocking part to supply a second gas into the reaction tube. - View Dependent Claims (7, 8, 9, 10)
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12. A method of manufacturing a semiconductor device, comprising:
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(a) loading a substrate retainer accommodating a plurality of wafers into a reaction tube; and (b) processing the plurality of wafers by supplying a first gas through a first nozzle into the reaction tube by controlling a first gas supply system to co-operate with a first blocking part and supplying a second gas through a second nozzle into the reaction tube by controlling a second gas supply system to co-operate with a second blocking part, wherein the first nozzle and the second nozzle extend from an inner wall of a furnace opening part to an inside of the reaction tube, the first blocking part and the second blocking part are connected to the first nozzle and the second nozzle, respectively, and the first gas supply system and the second gas supply system are provided at upstream sides of the first nozzle and the second nozzle, respectively.
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Specification