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METHOD OF ETCHING SUBSTRATE

  • US 20190109010A1
  • Filed: 08/08/2018
  • Published: 04/11/2019
  • Est. Priority Date: 10/11/2017
  • Status: Active Grant
First Claim
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1. A pattern forming method, comprising:

  • forming a photoresist pattern on a substrate, the photoresist pattern containing a first carbon compound;

    a reforming process of forming an upper mask layer on a top surface of the photoresist pattern, the upper mask layer containing a second carbon compound different in kind from the first carbon compound; and

    etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.

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