METHOD OF ETCHING SUBSTRATE
First Claim
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1. A pattern forming method, comprising:
- forming a photoresist pattern on a substrate, the photoresist pattern containing a first carbon compound;
a reforming process of forming an upper mask layer on a top surface of the photoresist pattern, the upper mask layer containing a second carbon compound different in kind from the first carbon compound; and
etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.
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Abstract
A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate, reforming a top surface of the photoresist pattern to form an upper mask layer which contains a second carbon compound, different from the first carbon compound, on the photoresist pattern, and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.
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Citations
20 Claims
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1. A pattern forming method, comprising:
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forming a photoresist pattern on a substrate, the photoresist pattern containing a first carbon compound; a reforming process of forming an upper mask layer on a top surface of the photoresist pattern, the upper mask layer containing a second carbon compound different in kind from the first carbon compound; and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A pattern forming method, comprising:
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forming a hard mask layer comprising silicon oxynitride, on a substrate; forming a photoresist pattern that is photo-sensitive to extreme ultraviolet (EUV) light on the hard mask layer; a reforming process of forming an upper mask layer on a top surface of the photoresist pattern; and etching the hard mask layer and a portion of the substrate using the photoresist pattern and the upper mask layer as an etch mask, wherein the reforming process comprises; supplying a nitrogen gas and a methane gas into a region over the substrate at a flow rate ratio of 10;
1;applying an upper power to the region over the substrate to induce plasma and to deposit radicals in the plasma onto the upper mask layer; and applying a lower power to a region below the substrate to re-induce the plasma and to remove a portion of the upper mask layer using ions in the plasma. - View Dependent Claims (12, 13, 14, 15)
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16. A method of etching a substrate, comprising:
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forming a photoresist pattern on a substrate; supplying a nitrogen gas and a methane gas into a region over the photoresist pattern at a first flow rate ratio; applying an upper power to the nitrogen gas and the methane gas to induce plasma and to deposit radicals in the plasma on the photoresist pattern; cutting off the upper power; supplying the nitrogen gas and the methane gas at a second flow rate ratio, in which a fraction of the nitrogen gas is higher than that in the first flow rate ratio; and applying a lower power to the nitrogen gas and the methane gas to re-induce the plasma and to remove a portion of the deposited radicals using ions in the plasma. - View Dependent Claims (17, 18, 19, 20)
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Specification