METROLOGY APPARATUS, LITHOGRAPHIC SYSTEM, AND METHOD OF MEASURING A STRUCTURE

• US 20190113852A1
• Filed: 10/12/2018
• Published: 04/18/2019
• Est. Priority Date: 10/16/2017
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: RAVENSBERGEN, Janneke, AKBULUT, Duygu, PANDEY, Nitesh, LIAN, Jin
• Granted Patent: US 10,444,640 B2
• Time in Patent Office: Days
• CPC Class Codes: G01B 9/02083 characterised by particular signal processing and presentation
• CPC Class Codes: G01B 9/0209 Low-coherence interferometers
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.

Claims

1. A metrology apparatus configured to measure a structure formed on a substrate to determine a parameter of interest, the metrology apparatus comprising:

an optical system configured to focus radiation onto the structure and direct redirected radiation from the structure to a detection system, wherein;

the optical system is configured to apply a plurality of different offsets of an optical characteristic to radiation before and/or after redirection by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution; and

the detection system is configured to detect a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution, wherein each radiation intensity corresponds to a different one of the plurality of different offsets.

2. The apparatus of claim 1, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.

3. The apparatus of claim 1, wherein the different offsets comprise either or both of a different amplitude offset or a different phase offset.

4. The apparatus of claim 1, wherein the different offsets comprise at least one offset in a first sense and at least one offset in a second sense, opposite to the first sense.

5. The apparatus of claim 1, wherein:

the different offsets are at least partially defined by a polarization-dependent optical element configured to modify an amplitude or phase of radiation passing through the polarization-dependent optical element in dependence on the polarization of the radiation; and

the optical system is configured such that radiation from or forming the first point of the pupil plane field distribution passes through the polarization-dependent optical element with a different polarization than radiation from or forming the second point of the pupil plane field distribution.

6. The apparatus of claim 1, wherein the optical system comprises a polarizing beam splitter and the different offsets are at least partially defined by different relative angles between the polarizing beam splitter and either or both of a retarder and polarizer.

7. The apparatus of claim 1, wherein the different offsets are at least partially defined by different splitting ratios of a beam splitter.

8. The apparatus of claim 1, wherein the optical system is configured to cause the detection system to detect sets of radiation intensities resulting from interference between redirected radiation from a plurality of different pairs of first and second points in the pupil plane field distribution, each set of radiation intensities comprising a radiation intensity for each of the plurality of different offsets.

9. The apparatus of claim 1, wherein the optical system is configured to split a radiation beam into a plurality of radiation beams and later recombine the plurality of radiation beams in order to cause the interference between the redirected radiation from the first and second points of the pupil plane field distribution.

10. The apparatus of claim 1, wherein the optical system comprises a beam splitter configured to split a radiation beam into a first radiation beam and a second radiation beam, and the optical system is configured such that:

the first radiation beam and the second radiation beam propagate in opposite directions around a common optical path comprising a first branch and a second branch, the first radiation beam propagating from the beam splitter to the substrate along the first branch and from the substrate back to the beam splitter along the second branch, and the second radiation beam propagating from the beam splitter to the substrate along the second branch and from the substrate back to the beam splitter along the first branch.

11. The apparatus of claim 1, wherein at least two of the plurality of radiation intensities corresponding to the plurality of different offsets are measured simultaneously in different measurement branches.

12. The apparatus of claim 1, wherein at least two of the plurality of radiation intensities corresponding to the plurality of different offsets are measured at different times in the same measurement branch.

13. The apparatus of claim 1, wherein the parameter of interest comprises overlay.

14. A lithographic system comprising:

a lithographic apparatus configured to perform a lithographic process; and

the metrology apparatus of claim 1.

15. A method of measuring a structure formed on a substrate to determine a parameter of interest, the method comprising:

focusing radiation onto the structure and using a detection system to detect redirected radiation from the structure, wherein;

a plurality of different offsets of an optical characteristic are applied to radiation before and/or after redirection by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution; and

the detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution, wherein each radiation intensity corresponds to a different one of the plurality of different offsets.

16. The method of claim 15, wherein at least two of the plurality of radiation intensities corresponding to the plurality of different offsets are measured simultaneously.

17. The method of claim 15, wherein at least two of the plurality of radiation intensities corresponding to the plurality of different offsets are measured at different times.

18. The method of claim 15, wherein the parameter of interest comprises an asymmetry in the structure.

19. The method of claim 15, wherein the parameter of interest comprises overlay.

20. The method of claim 15, wherein the detected radiation intensities result from zeroth order reflection from the structure.