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NON-VOLATILE MEMORY

  • US 20190115076A1
  • Filed: 05/25/2018
  • Published: 04/18/2019
  • Est. Priority Date: 10/13/2017
  • Status: Active Grant
First Claim
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1. A non-volatile memory comprising a memory cell, the memory cell comprising a storage element, the storage element comprising p×

  • q floating gate transistors,wherein the q floating gate transistors in each row are serially connected between a first terminal and a second terminal of the storage element, andwherein the x-th floating gate transistors in each row share an x-th floating gate, wherein x is an integer, and 1≤

    x≤

    q.

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