METHOD FOR CONTROLLING OPERATIONS OF DATA STORAGE DEVICE, AND ASSOCIATED DATA STORAGE DEVICE AND CONTROLLER
First Claim
1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising:
- selecting a block of multiple blocks of a NV memory element of the plurality of NV memory elements;
receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device;
generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and
writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
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Abstract
A method for controlling operations of a data storage device, the associated data storage device and the controller thereof are provided. The method can comprise: selecting a block of multiple blocks of a non-volatile (NV) memory element of a plurality of NV memory elements; receiving a data-writing command from a host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
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Citations
20 Claims
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1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising:
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selecting a block of multiple blocks of a NV memory element of the plurality of NV memory elements; receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A data storage device, comprising:
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a non-volatile (NV) memory, for storing information, wherein the NV memory comprises a plurality of NV memory elements; and a controller, coupled to the NV memory, for controlling operations of the data storage device, wherein the controller comprises; a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein; the controller selects a block of a plurality of blocks of a NV memory element of the plurality of NV memory elements; the controller receives a data-writing command from a host device, wherein the data-writing command is one of the plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (9, 10)
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11. A controller of a data storage device, the data storage device comprising the controller and a non-volatile (NV) memory comprising a plurality of NV memory elements, the controller comprises:
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a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein; the controller selects a block of a plurality of blocks of a NV memory element of the plurality of NV memory elements; the controller receives a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (12, 13)
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14. A method of data writing, which is applicable to a data storage device, the method comprising:
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selecting a block as an active block, the block being selected from a plurality of blocks comprised in the data storage device; dividing a plurality of word-lines of the active block into at least one reserved word-line and a plurality of non-reserved word-lines; programming a first type of data to the non-reserved word-lines in a preset writing mode; and programming a second type of data to the at least one reserved word-line in a non-preset writing mode, wherein the preset writing mode is programmable with more data to any word-line of the word-lines than the non-preset writing mode. - View Dependent Claims (15, 16)
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17. A method of data writing, which is applicable to a data storage device, the method comprising:
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selecting a block as an active block, the block being selected from a plurality of blocks comprised in the data storage device; and dividing a plurality of word-lines of the active block into at least one reserved word-line and a plurality of non-reserved word-lines, wherein a data storage volume of any word-line of the non-reserved word-lines is higher than that of any word-line of the at least one reserved word-line. - View Dependent Claims (18, 19)
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20. A data storage device, comprising:
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a non-volatile (NV) memory, acting as a plurality of blocks of a storage medium, each of the blocks has a plurality of word-lines; and at least one of the blocks, designated as at least one data block, wherein the word-lines of the at least one data block are divided into at least one reserved word-line and a plurality of non-reserved word-lines, and a data storage volume of any word-line of the non-reserved word-lines is higher than that of any word-line of the at least one reserved word-line.
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Specification