SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20190131120A1
• Filed: 02/27/2018
• Published: 05/02/2019
• Est. Priority Date: 10/31/2017
• Status: Abandoned Application

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: YAMAGUCHI, Yoshihide
• Application Number:
  US15/906,933
• Publication Number:
  US 20190131120A1
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45559 Diffusion of reactive gas to substrate
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02041 Cleaning
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/31056 the removal being a selective chemical etching step, e.g. selective dry etching through a mask
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

Claims

1. A semiconductor manufacturing apparatus, comprising:

a container in which a processing chamber is provided;

a stage provided inside the processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and

a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein

mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and

catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied as the catalytic gas.

2. The semiconductor manufacturing apparatus according to claim 1, wherein

the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and

the high-k insulating film includes silicate of the metal element.

3. The semiconductor manufacturing apparatus according to claim 1, wherein

the metal element included in the high-k insulating film is a rare earth element, and

the high-k insulating film includes silicate of the rare earth element.

4. The semiconductor manufacturing apparatus according to claim 1, wherein

the first system includes a first vaporizer,

the second system includes a second vaporizer,

the first vaporizer vaporizes a mixed chemical liquid of a chemical stock liquid for the complex forming gas and a chemical stock liquid for the complex stabilizing material gas under a predetermined temperature and pressure condition, and

the second vaporizer vaporizes a chemical stock liquid using the second organometallic complex as a raw material under the predetermined temperature and pressure condition.

5. A method for manufacturing a semiconductor device, comprising:

mounting a semiconductor substrate, in which a mask layer having a predetermined pattern shape is formed on a high-k insulating film including silicate, in a processing chamber;

desorbing gas or foreign matter adsorbed on a surface of the semiconductor substrate;

supplying catalytic gas under decompression and heating;

cooling the semiconductor substrate after a supply of the catalytic gas is stopped and supplying reactive gas to the processing chamber in a state in which a temperature of the semiconductor substrate falls below a predetermined temperature;

decompressing and heating an inside of the processing chamber by stopping the supply of the reactive gas; and

exhausting a first organometallic complex from the processing chamber by vaporizing the first organometallic complex generated by reacting with a metal element included in the high-k insulating film.

6. The method for manufacturing a semiconductor device according to claim 5, wherein

the catalytic gas is catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material, and

the reactive gas is mixed gas which includes complex forming gas reacting with the metal element included in the high-k insulating film to form the first organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex.

7. The method for manufacturing a semiconductor device according to claim 5, wherein

the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and

the high-k insulating film includes silicate of the metal element.

8. The method for manufacturing a semiconductor device according to claim 5, wherein

the metal element included in the high-k insulating film is a rare earth element, and

the high-k insulating film includes silicate of the rare earth element.

9. The method for manufacturing a semiconductor device according to claim 6, wherein

a raw material for the complex forming gas is an organic compound obtained by forming a coordinate bond of at least two or more coordination bond to a transition metal atom, a so-called multidentate ligand molecule.

10. The method for manufacturing a semiconductor device according to claim 9, wherein

the raw material for the complex forming gas is diketones including a fluorine atom.

11. The method for manufacturing a semiconductor device according to claim 6, wherein

a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair of an oxygen atom or a nitrogen atom in a molecular skeleton and 5 or more atoms except a hydrogen atom and a fluorine atom.

12. The method for manufacturing a semiconductor device according to claim 11, wherein

the raw material for the complex stabilizing material gas is ethers.

13. The method for manufacturing a semiconductor device according to claim 6, wherein

the second organometallic complex is an organometallic complex including an iron group element.

14. The method for manufacturing a semiconductor device according to claim 13, wherein

the second organometallic complex is an organometallic complex including cobalt.

15. The method for manufacturing a semiconductor device according to claim 13, wherein

the second organometallic complex is an organometallic complex not including a fluorine atom.