Integrated Circuits with Doped Gate Dielectrics
First Claim
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1. A method comprising:
- receiving a workpiece that includes a substrate having a channel region;
forming a gate dielectric on the channel region;
forming a first layer on the gate dielectric, wherein the first layer includes tungsten fluoride;
annealing the workpiece to transfer fluorine from the first layer to the gate dielectric; and
removing the first layer after the annealing.
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Abstract
Examples of an integrated circuit with a gate structure and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate having a channel region. A gate dielectric is formed on the channel region, and a layer containing a dopant is formed on the gate dielectric. The workpiece is annealed to transfer the dopant to the gate dielectric, and the layer is removed after the annealing. In some such examples, after the layer is removed, a work function layer is formed on the gate dielectric and a fill material is formed on the work function layer to form a gate structure.
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Citations
21 Claims
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1. A method comprising:
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receiving a workpiece that includes a substrate having a channel region; forming a gate dielectric on the channel region; forming a first layer on the gate dielectric, wherein the first layer includes tungsten fluoride; annealing the workpiece to transfer fluorine from the first layer to the gate dielectric; and removing the first layer after the annealing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 21)
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8. (canceled)
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11. A method comprising:
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receiving a substrate having; a pair of source/drain features; a channel region between the pair of source/drain features; and a dummy gate structure on the channel region; removing the dummy gate structure to define a trench over the channel region; forming a high-k gate dielectric within the trench on the channel region; forming a layer containing tungsten fluoride on the high-k gate dielectric; performing a thermal process to transfer the fluorine from the layer to the high-k gate dielectric; and removing the layer after the performing of the thermal process. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method comprising:
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depositing a gate dielectric on a substrate; depositing a sacrificial layer containing tungsten fluoride on the gate dielectric; performing an annealing process to transfer fluorine from the sacrificial layer to the gate dielectric; removing the sacrificial layer; and forming a gate structure that includes the gate dielectric with the fluorine after the removing of the sacrificial layer. - View Dependent Claims (18, 19, 20)
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Specification