NONVOLATILE MEMORY DEVICE
First Claim
1. A three-dimensional (3D) nonvolatile memory comprising:
- a stacked structure that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers, whereinthe stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region, andthe connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction approaching the second cell region, a second step portion that contacts the second cell region and has a stepped shape that descends in a direction approaching the first cell region, and a connection portion that connects the first cell region and the second cell region.
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Accused Products
Abstract
A three-dimensional (3D) nonvolatile memory includes a stacked structure that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers. The stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region. The connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction approaching the second cell region, a second step portion that contacts the second cell region and has a stepped shape that descends in a direction approaching the first cell region, and a connection portion that connects the first cell region and the second cell region.
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Citations
20 Claims
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1. A three-dimensional (3D) nonvolatile memory comprising:
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a stacked structure that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers, wherein the stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region, and the connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction approaching the second cell region, a second step portion that contacts the second cell region and has a stepped shape that descends in a direction approaching the first cell region, and a connection portion that connects the first cell region and the second cell region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A three-dimensional (3D) nonvolatile memory comprising:
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a lower region that includes a lower substrate and a peripheral circuit on the lower substrate; and a stacked structure on the lower region, wherein the stacked structure includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers, wherein the stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region, and the connection region of the stacked structure includes a step portion that has a stepped shape that descends from a periphery of the connection region toward a center thereof. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A three-dimensional (3D) nonvolatile memory comprising:
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a lower region that includes a lower substrate and a peripheral circuit on the lower substrate; an upper substrate on the lower region; a stacked structure on the upper substrate that includes a plurality of conductive layers that alternate with and are spaced apart from each other by a plurality of interlayer insulating layers; and a plurality of contacts that electrically connect each of the plurality of conductive layers to the peripheral circuit, wherein the stacked structure includes a first cell region, a second cell region spaced apart from the first cell region, and a connection region between the first cell region and the second cell region, the connection region includes a first step portion that contacts the first cell region and has a stepped shape that descends in a direction toward the second cell region, and a connection portion that connects the first step portion and the second cell region, and the plurality of contacts are disposed in the first step portion. - View Dependent Claims (17, 18, 19, 20)
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Specification