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THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRACE REGION AND METHOD OF MAKING THEREOF

  • US 20190148392A1
  • Filed: 11/15/2017
  • Published: 05/16/2019
  • Est. Priority Date: 11/15/2017
  • Status: Active Grant
First Claim
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1. A three-dimensional memory device comprising:

  • an alternating stack of insulating layers and electrically conductive layers comprising a doped semiconductor material located over a substrate, wherein the alternating stack includes a memory array region in which each of the electrically conductive layers is present and a terrace region in which the electrically conductive layers have a respective lateral extent that decreases as a function of a vertical distance from the substrate;

    memory stack structures located in the memory array region and vertically extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel; and

    contact via structures located in the terrace region and contacting a respective one of the electrically conductive layers,wherein each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within the terrace region.

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