LOW SUBSTRATE LEAKAGE ZENER DIODE WITH MODULATED BURIED JUNCTION
First Claim
1. An apparatus, comprising:
- a semiconductor layer doped with a first-type dopant;
a first region doped with the first-type dopant and formed in the semiconductor layer;
a second region doped with the first-type dopant and formed in the semiconductor layer;
a third region doped with a second-type dopant and formed in the semiconductor layer, the second-type dopant is opposite the first-type dopant, the first, second, and third regions are non-overlapping, and the third region is positioned between the first region and the second region; and
a plurality of Zener implant regions buried in the semiconductor layer and the third region, each of the plurality of Zener implant regions configured to generate a different pinch-off region.
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Abstract
In some embodiments, an apparatus comprises a semiconductor layer doped with a first-type dopant, a first region doped with the first-type dopant, a second region doped with the first-type dopant, and a third region doped with a second-type dopant, where the second-type dopant is opposite the first-type dopant. The first, second, and third regions are non-overlapping and are formed in the semiconductor layer. The third region is positioned between the first region and the second region. The apparatus also comprises a plurality of Zener implant regions buried in the semiconductor layer and the third region, where each of the plurality of Zener implant regions is configured to generate a different pinch-off region.
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Citations
15 Claims
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1. An apparatus, comprising:
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a semiconductor layer doped with a first-type dopant; a first region doped with the first-type dopant and formed in the semiconductor layer; a second region doped with the first-type dopant and formed in the semiconductor layer; a third region doped with a second-type dopant and formed in the semiconductor layer, the second-type dopant is opposite the first-type dopant, the first, second, and third regions are non-overlapping, and the third region is positioned between the first region and the second region; and a plurality of Zener implant regions buried in the semiconductor layer and the third region, each of the plurality of Zener implant regions configured to generate a different pinch-off region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus, comprising:
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a semiconductor layer doped with a first-type dopant; a first region doped with the first-type dopant and formed at a first position in the semiconductor layer; a second region doped with the first-type dopant and formed at a second position in the semiconductor layer; and multiple, non-overlapping, highly-doped regions buried in the semiconductor layer and in a lightly-doped region, wherein the apparatus comprises a buried Zener diode. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification