TRANSISTOR WITH DUAL SPACER AND FORMING METHOD THEREOF
First Claim
1. A transistor with dual spacers, comprising:
- a gate disposed on a substrate, wherein the gate comprises a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate;
a first dual spacer disposed on the gate dielectric layer beside the gate, wherein the first dual spacer comprises a first inner spacer and a first outer spacer;
a second inner spacer having an L-shaped profile disposed on the gate dielectric layer beside the first dual spacer.
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Accused Products
Abstract
A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.
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Citations
26 Claims
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1. A transistor with dual spacers, comprising:
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a gate disposed on a substrate, wherein the gate comprises a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate; a first dual spacer disposed on the gate dielectric layer beside the gate, wherein the first dual spacer comprises a first inner spacer and a first outer spacer; a second inner spacer having an L-shaped profile disposed on the gate dielectric layer beside the first dual spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A transistor with dual spacers, comprising:
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a gate dielectric layer disposed on a substrate; a gate electrode disposed on the gate dielectric layer; a spacer disposed on the gate dielectric layer beside the gate electrode; and a first dual spacer comprising a first inner spacer disposed on the gate dielectric layer beside the spacer, wherein the first inner spacer has an L-shaped profile. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of forming a transistor with dual spacers, comprising:
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forming a gate dielectric layer and a gate electrode on a substrate; forming a first dual spacer comprising a first inner spacer and a first outer spacer on the gate dielectric layer beside the gate electrode; forming a second dual spacer comprising a second inner spacer having an L-shaped profile and a second outer spacer on the gate dielectric layer beside the first dual spacer; and removing the second outer spacer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification