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FIELD-EFFECT PHOTOVOLTAIC ELEMENTS

  • US 20190157488A1
  • Filed: 01/06/2019
  • Published: 05/23/2019
  • Est. Priority Date: 01/13/2012
  • Status: Active Grant
First Claim
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1. A photovoltaic structure comprising:

  • a gallium arsenide absorption layer having a front side, a back side and a first conductivity type;

    a gate dielectric layer in direct contact with the front side of the absorption layer;

    a gate electrode in direct contact with the gate dielectric layer;

    a back surface field layer in direct contact with the back side of the absorption layer, the back surface field layer having a second conductivity type opposite from the first conductivity type; and

    a source/drain region on the back side of the absorption layer;

    the absorption layer, the gate dielectric layer, the gate electrode and the back surface field layer being configured to cause diffusion of charge carriers, thereby forming a n-p or a p-n junction including a charge carrier inversion layer, when light penetrates the absorption layer.

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