FIELD-EFFECT PHOTOVOLTAIC ELEMENTS
First Claim
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1. A photovoltaic structure comprising:
- a gallium arsenide absorption layer having a front side, a back side and a first conductivity type;
a gate dielectric layer in direct contact with the front side of the absorption layer;
a gate electrode in direct contact with the gate dielectric layer;
a back surface field layer in direct contact with the back side of the absorption layer, the back surface field layer having a second conductivity type opposite from the first conductivity type; and
a source/drain region on the back side of the absorption layer;
the absorption layer, the gate dielectric layer, the gate electrode and the back surface field layer being configured to cause diffusion of charge carriers, thereby forming a n-p or a p-n junction including a charge carrier inversion layer, when light penetrates the absorption layer.
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Abstract
Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.
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Citations
15 Claims
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1. A photovoltaic structure comprising:
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a gallium arsenide absorption layer having a front side, a back side and a first conductivity type; a gate dielectric layer in direct contact with the front side of the absorption layer; a gate electrode in direct contact with the gate dielectric layer; a back surface field layer in direct contact with the back side of the absorption layer, the back surface field layer having a second conductivity type opposite from the first conductivity type; and a source/drain region on the back side of the absorption layer; the absorption layer, the gate dielectric layer, the gate electrode and the back surface field layer being configured to cause diffusion of charge carriers, thereby forming a n-p or a p-n junction including a charge carrier inversion layer, when light penetrates the absorption layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A photovoltaic circuit comprising:
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a plurality of solar cell devices, each solar cell device comprising; a gallium arsenide absorption layer having a front side, a back side and a first conductivity type; a gate dielectric layer in direct contact with the front side of the absorption layer; a gate electrode in direct contact with the gate dielectric layer; a back surface field layer in direct contact with the back side of the absorption layer, the back surface field layer having a second conductivity type opposite from the first conductivity type; and a source/drain region on the back side of the absorption layer; the absorption layer, the gate dielectric layer, the gate electrode and the back surface field layer of each solar cell device being configured to cause diffusion of charge carriers, thereby forming a n-p or a p-n junction including charge carrier inversion layer, when light penetrates the absorption layer; the solar cell devices being electrically connected in series and wherein the gate electrode of at least one of the solar cell devices is electrically connected to one of the back surface field layers of another of the solar cell devices. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification