FLEXIBLE ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING SAME

• US 20190157584A1
• Filed: 11/30/2017
• Published: 05/23/2019
• Est. Priority Date: 11/22/2017
• Status: Active Grant

• Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: LIU, Xiang
• Granted Patent: US 10,411,206 B2
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 21/77 Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate electrically programmable read-only memories or multistep manufacturing processes therefor H10B69/00
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: H10K 85/20 Carbon compounds, e.g. carbon nanotubes or fullerenes
• CPC Class Codes: H10K 85/221 : Carbon nanotubes
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

The present disclosure provides a flexible array substrate and a method for manufacturing same. The flexible array substrate includes: a substrate; a gate electrode and a scan line disposed on the substrate; a first insulation layer disposed on the gate electrode and the scan line; an electrically conductive channel disposed on the first insulation layer; a source electrode, a drain electrode, and a data line disposed on the electrically conductive channel; a second insulation layer disposed on the source electrode, the drain electrode, and the data line; and a pixel electrode disposed on the second insulation layer.

Claims

1. A method for manufacturing a flexible array substrate, comprising:

providing a substrate;

forming a first graphene layer on the substrate, and patterning the first graphene layer to form a gate electrode and a scan line;

forming a first insulation layer on the substrate, the gate electrode, and the scan line;

forming a metal-oxide-semiconductor layer on the first insulation layer, and patterning the metal-oxide-semiconductor layer to form an electrically conductive channel;

forming a second graphene layer on the electrically conductive channel and the first insulation layer, and patterning the second graphene layer to form a source electrode, a drain electrode, and a data line, wherein the electrically conductive channel is connected to the source electrode and the drain electrode;

forming a second insulation layer on the substrate, the source electrode, the drain electrode, and the data line; and

forming a carbon nanotube layer on the second insulation layer, and patterning the carbon nanotube layer to form a pixel electrode;

wherein the pixel electrode is electrically connected to the drain electrode via a through-hole;

wherein the substrate is a transparent glass substrate or a plastic substrate; and

wherein the first insulation layer includes a third insulation layer and a fourth insulation layer disposed on the third insulation layer; and

the third insulation layer is made of an organic resin, and the fourth insulation layer is made of oxide, nitride, or oxynitride.

2. The method for manufacturing the flexible array substrate according to claim 1, wherein the metal-oxide-semiconductor layer has a thickness ranging from 50 to 2000 angstroms.

3. The method for manufacturing the flexible array substrate according to claim 1, wherein the second insulation layer is made of an organic resin.

4. The method for manufacturing the flexible array substrate according to claim 3, wherein the second insulation layer has a thickness ranging from 4000 to 30000 angstroms.

5. The method for manufacturing the flexible array substrate according to claim 1, wherein the metal-oxide-semiconductor layer is made of amorphous indium-gallium-zinc oxide.

6. The method for manufacturing the flexible array substrate according to claim 1, wherein the first graphene layer and the second graphene layer are formed by using a chemical vapor deposition process or a spin coating process.

7. A method for manufacturing a flexible array substrate, comprising:

providing a substrate;

forming a first graphene layer on the substrate, and patterning the first graphene layer to form a gate electrode and a scan line;

forming a first insulation layer on the substrate, the gate electrode, and the scan line;

forming a metal-oxide-semiconductor layer on the first insulation layer, and patterning the metal-oxide-semiconductor layer to form an electrically conductive channel;

forming a second graphene layer on the electrically conductive channel and the first insulation layer, and patterning the second graphene layer to form a source electrode, a drain electrode, and a data line, wherein the electrically conductive channel is connected to the source electrode and the drain electrode;

forming a second insulation layer on the substrate, the source electrode, the drain electrode, and the data line; and

forming a carbon nanotube layer on the second insulation layer, and patterning the carbon nanotube layer to form a pixel electrode, wherein the pixel electrode is electrically connected to the drain electrode via a through-hole.

8. The method for manufacturing the flexible array substrate according to claim 7, wherein the substrate is a transparent glass substrate or a plastic substrate.

9. The method for manufacturing the flexible array substrate according to claim 7, wherein the first insulation layer includes a third insulation layer and a fourth insulation layer disposed on the third insulation layer;

and the third insulation layer is made of an organic resin, and the fourth insulation layer is made of oxide, nitride, or oxynitride.

10. The method for manufacturing the flexible array substrate according to claim 9, wherein the metal-oxide-semiconductor layer has a thickness ranging from 50 to 2000 angstroms.

11. The method for manufacturing the flexible array substrate according to claim 7, wherein the second insulation layer is made of an organic resin.

12. The method for manufacturing the flexible array substrate according to claim 11, wherein the second insulation layer has a thickness ranging from 4000 to 30000 angstroms.

13. The method for manufacturing the flexible array substrate according to claim 7, wherein the metal-oxide-semiconductor layer is made of amorphous indium-gallium-zinc oxide.

14. The method for manufacturing the flexible array substrate according to claim 7, wherein the first graphene layer and the second graphene layer are formed by using a chemical vapor deposition process or a spin coating process.

15. A flexible array substrate, comprising:

a substrate;

a gate electrode and a scan line disposed on the substrate;

a first insulation layer disposed on the gate electrode and the scan line;

an electrically conductive channel disposed on the first insulation layer;

a source electrode, a drain electrode, and a data line disposed on the electrically conductive channel;

a second insulation layer disposed on the source electrode, the drain electrode, and the data line; and

a pixel electrode disposed on the second insulation layer;

wherein the electrically conductive channel is connected to the source electrode and the drain electrode, and the pixel electrode is electrically connected to the drain electrode via a through-hole;

wherein the gate line and the scan line are formed from a patterned first graphene layer;

the electrically conductive channel is formed from a patterned metal-oxide-semiconductor layer;

the source electrode, the drain electrode, and the data line are formed from a patterned second graphene layer; and

the pixel electrode is formed from a patterned carbon nanotube layer.

16. The flexible array substrate according to claim 15, wherein the substrate is a transparent glass substrate or a plastic substrate.

17. The flexible array substrate according to claim 15, wherein the first insulation layer includes a third insulation layer and a fourth insulation layer disposed on the third insulation layer;

and the third insulation layer is made of an organic resin, and the fourth insulation layer is made of oxide, nitride, or oxynitride.

18. The flexible array substrate according to claim 17, wherein the metal-oxide-semiconductor layer has a thickness ranging from 50 to 2000 angstroms.

19. The flexible array substrate according to claim 15, wherein the second insulation layer is made of an organic resin.

20. The flexible array substrate according to claim 19, wherein the second insulation layer has a thickness ranging from 4000 to 30000 angstroms.