SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS
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Abstract
The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus.
A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.
5 Citations
45 Claims
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1-20. -20. (canceled)
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21. An imaging device comprising a pixel, the pixel comprising:
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a first photoelectric conversion unit; a floating diffusion coupled to the first photoelectric conversion unit; a first transistor, one of a source or a drain of the first transistor being coupled to the floating diffusion; a second transistor, a gate of the second transistor being coupled to the floating diffusion; a third transistor, one of a source or a drain of the third transistor being coupled to one of a source or a drain of the second transistor; and a fourth transistor, one of a source or a drain of the fourth transistor being coupled to a node between the second transistor and the third transistor, wherein the other of the source or the drain of the first transistor and the other of the source or the drain of the fourth transistor are configured to have a same potential. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification