SEMICONDUCTOR DEVICE

• US 20190181300A1
• Filed: 06/20/2017
• Published: 06/13/2019
• Est. Priority Date: 06/20/2016
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: PARK, Su Ik, SUNG, Youn Joon, KIM, Min Sung, LEE, Yong Gyeong, LEE, Eun Dk
• Granted Patent: US 10,734,552 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages

Abstract

An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.

Claims

1. A semiconductor device comprising:

a conductive substrate;

a light emitting structure comprising,

a first conductive semiconductor layer,

a second conductive semiconductor layer,

an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and

a plurality of recesses that passes through the second conductive semiconductor layer and the active layer and extends into the first conductive semiconductor layer;

a plurality of first electrodes electrically connected with the first conductive semiconductor layer; and

a second electrode electrically connected with the second conductive semiconductor layer,

wherein the first conductive semiconductor, the second conductive semiconductor and the active layer include Aluminum respectively,

wherein the plurality of the first electrodes contacts to a portion of the first conductive semiconductor which is disposed on an upper surface of the plurality of recesses,

wherein the second electrode contacts to the second conductive semiconductor,

wherein light emitted from the active layer has a main peak in a range of 100 nm to 320 nm, and

wherein an area of a top surface of the second electrode comprises a range of 35% to 70% of the lower surface of the second conductive semiconductor.

11. The semiconductor device of claim 1, wherein the conductive substrate includes a plurality of side surfaces, wherein a diameter of a top surface of the recess comprises a range of 3.8% to 6% of each of a length of the side surface of the conductive substrate.

12. The semiconductor device of claim 11, wherein the diameter of the top surface of the recess comprises a range of 38 μ

m to 60 μ

m.

13. The semiconductor device of claim 12, wherein a number of the plurality of the recesses is 48 to 236.

14. The semiconductor device of claim 12, wherein an area of the top surface of the plurality of recesses comprises a range of 7.4% to 20% of the lower surface of the second conductive semiconductor.

15. The semiconductor device of claim 14, wherein the area of the top surface of the second electrodes is 1.75 times to 9.45 times of the area of the top surface of the first electrodes.

16. The semiconductor device of claim 1, further comprising a first conductive layer provided between the light emitting structure and the conductive substrate,

wherein the first conductive layer comprises a plurality of connecting electrodes extending to the plurality of the recesses and connecting to the plurality of the first electrodes,

wherein the plurality of connecting electrodes extends to the plurality of the recesses respectively, and

wherein a number of the plurality of connecting electrodes is 48 to 236.

17. The semiconductor device of claim 16, further comprising a second conductive layer disposed between the second electrode and the first conductive layer,

wherein the second conductive layer surrounds the second electrode, and

wherein the second conductive layer comprises an area which contacts to the second electrode and an area which contact to the second conductive semiconductor.

18. The semiconductor device of claim 17, further comprising an insulation layer provided between the second conductive layer and the first conductive layer,

wherein the insulation layer extends into the plurality of the recesses, and

wherein the insulation layer comprises through holes provided in the plurality of the recesses.

19. The semiconductor device of claim 18, wherein the plurality of the first electrodes is provided in the through holes.

20. The semiconductor device of claim 19, wherein a width in a horizontal direction of a portion of the insulation layer which contacts to the top surface of the plurality of the recesses comprises a range of 11 μ

m to 28 μ

m.

21. The semiconductor device of claim 17, further comprising a second electrode pad provided on the conductive substrate and spaced away from the light emitting structure,

wherein the second electrode pad electrically connects to the second conductive layer.

22. The semiconductor device of claim 21, wherein the second electrode pad includes a groove thereon, and

wherein a top surface of the light emitting structure includes a pattern.

23. The semiconductor device of claim 18, wherein the second conductive layer includes a concave portion provided on a lower surface of the second conductive layer, and

wherein the concave portion concaves in a direction from the lower surface of the second conductive layer toward an upper surface of the second conductive layer.

24. The semiconductor device of claim 23, wherein the second conductive layer extends from a lower surface of the second electrode to a spaced area in which the second electrode is spaced away from the insulation layer, and

wherein the concave portion overlaps with the spaced area in vertical direction.

25. The semiconductor device of claim 24, wherein the insulation layer is separated from an end of the second conductive layer so that the insulation layer is provided on a first area between the second conductive semiconductor and the second conductive layer and is provided on a second area between the second conductive layer and the first conductive layer.

26. The semiconductor device of claim 12, wherein the plurality of the recesses includes an inner surface respectively, and

wherein an angle of a lower surface between the second conductive surface and the inner surface of the plurality of the recesses comprises a range of 90°

to 120°

.

27. The semiconductor device of claim 26, wherein the first conductive semiconductor comprises a first Al containing layer provided adjacent to the active layer, wherein the first Al containing layer is an area having the lowest Aluminum composition in the first conductive semiconductor, and the plurality of recesses are formed up to the first Al-containing layer, wherein the first electrode electrically connect the first Al-containing layer.

28. The semiconductor device of claim 11, wherein the top surface of the second electrode is a surface contacted to the lower surface of the second conductive semiconductor and the top surface of the plurality of the recesses is an end surface provided into the first conductive semiconductor layer.

2-10. -10. (canceled)

29. A semiconductor device package comprising:

a body; and

a semiconductor device provided in the body,

wherein the semiconductor device comprises,

a conductive substrate;

a light emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses that passes through the second conductive semiconductor layer and the active layer and extends into the first conductive semiconductor layer;

a plurality of first electrodes electrically connected to the first conductive semiconductor layer; and

a second electrode electrically connected to the second conductive semiconductor layer,

a first conductive layer provided between the light emitting structure and the conductive substrate,

a second conductive layer provided between the second electrode and the first conductive layer, and

a second electrode pad provided on the conductive substrate and spaced away from the light emitting structure,

wherein the first conductive semiconductor, the second conductive semiconductor, and the active layer include Aluminum respectively,

wherein the plurality of the first electrodes contacts to a portion of the first conductive semiconductor which is provided on an upper surface of the plurality of recesses,

wherein the second electrode contacts to the second conductive semiconductor,

wherein light emitted from the active layer has a main peak in a range of 100 nm to 320 nm,

wherein a total area of top surface of the plurality of recesses comprises a range of 13% to 30% of a lower surface of the second conductive semiconductor,

wherein an area of the second electrode comprises a range of 35% to 70% of the lower surface of the second conductive semiconductor, and

wherein the second electrode pad electrically connects to the second conductive layer.