Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry
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Abstract
Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.
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Citations
26 Claims
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1-21. -21. (canceled)
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22. An assembly, comprising:
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pillars of semiconductor material, with said pillars of semiconductor material being arranged in rows extending along a first direction;
the rows comprising intervening spacing regions between the pillars of semiconductor material;
the pillars of semiconductor material having upper surfaces at a first height, and the intervening spacing regions comprising spacing structures having upper surfaces at a second height below the first height;
the rows being spaced from one another by gap regions;linear conductive structures within the gap regions between the rows and extending along the first direction;
two of the linear conductive structures being within each of the gap regions and being spaced apart from one another by a separating region;
the separating region having a floor section with an undulating surface that extends across semiconductor segments and insulative segments;
the semiconductor segments being higher than the insulative segments;channel regions within the pillars of semiconductor material; gates within the linear conductive structures; and transistors comprising the channel regions and the gates. - View Dependent Claims (23, 24, 25, 26)
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Specification