SELF-ALIGNED AND MISALIGNMENT-TOLERANT LANDING PAD FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
First Claim
1. A method for fabricating a semiconductor device, the method comprising:
- forming a pad layer on and in contact with at least one trench line formed within a substrate;
depositing magnetic tunnel junction stack layers on and in contact with the pad layer; and
etching the magnetic tunnel junction stack layers to form a magnetic tunnel junction stack, where the etching stops on the pad layer.
1 Assignment
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Accused Products
Abstract
A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate and at least one trench line formed within the substrate. The semiconductor device further includes a self-aligned landing pad in contact with the at least one trench line, and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. The method includes forming a conductive layer on and in contact with at least one trench line formed within a substrate. Magnetic tunnel junction stack layers are deposited on and in contact with the conductive layer. The magnetic tunnel junction stack layers are etched to form a magnetic tunnel junction stack, where the etching stops on the conductive layer.
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Citations
20 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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forming a pad layer on and in contact with at least one trench line formed within a substrate; depositing magnetic tunnel junction stack layers on and in contact with the pad layer; and etching the magnetic tunnel junction stack layers to form a magnetic tunnel junction stack, where the etching stops on the pad layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a substrate; at least one trench line formed within the substrate; a self-aligned landing pad in contact with the at least one trench line; and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. - View Dependent Claims (11, 12, 13, 14, 15)
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16. An integrated circuit comprising:
at least one semiconductor device, wherein the at least one semiconductor device comprises a substrate; at least one trench line formed within the substrate; a self-aligned landing pad in contact with the at least one trench line; and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. - View Dependent Claims (17, 18, 19, 20)
Specification