NON-VOLATILE MEMORY WITH A NEW SENSING SEQUENCE CONTROL METHOD
First Claim
1. A non-volatile memory, comprising:
- a memory cell array comprising a word line, a bit line, an inverted bit line, a source line and an inverted source line, wherein a first sub-cell of a selected differential cell is connected with the word line, the bit line and the source line, and a second sub-cell of the selected differential cell is connected with the word line, the inverted bit line and the inverted source line;
a sense amplifier comprising a data line and an inverted data line, wherein the sense amplifier generates an output signal and an inverted output signals according to signals from the data line and the inverted data line;
a switching element comprising a first switching circuit and a second switching circuit, wherein the first switching circuit is connected between the data line and the bit line, and the second switching circuit is connected between the inverted data line and the inverted bit line;
a power switching circuit connected with the bit line, the inverted bit line, the source line and the inverted source line,wherein during a read cycle, an activation period of the word line contains a first period and a second period, wherein in the first period, the first sub-cell generates a first read current to a first current path, which is defined by the data line, the first switching circuit, the bit line, the first sub-cell, the source line and the power switching circuit, wherein in the first period, the second sub-cell generates a second read current to a second current path, which is defined by the inverted data line, the second switching circuit, the inverted bit line, the second sub-cell, the inverted source line and the power switching circuit,wherein the first current path and the second current path are controlled to be opened according to the correlation of the first read current and the second read current.
1 Assignment
0 Petitions
Accused Products
Abstract
A non-volatile memory includes a sense amplifier, a switching element and a power switching circuit. A first sub-cell is connected with a word line, a bit line and a source line. A second sub-cell is connected with the word line, an inverted bit line and an inverted source line. During a read cycle, an activation period of the word line contains a first period and a second period. In the first period, the first sub-cell generates a first read current to a first current path, and the second sub-cell generates a second read current to a second current path. The first current path and the second current path are controlled to be opened according to the correlation of the first read current and the second read current.
2 Citations
10 Claims
-
1. A non-volatile memory, comprising:
-
a memory cell array comprising a word line, a bit line, an inverted bit line, a source line and an inverted source line, wherein a first sub-cell of a selected differential cell is connected with the word line, the bit line and the source line, and a second sub-cell of the selected differential cell is connected with the word line, the inverted bit line and the inverted source line; a sense amplifier comprising a data line and an inverted data line, wherein the sense amplifier generates an output signal and an inverted output signals according to signals from the data line and the inverted data line; a switching element comprising a first switching circuit and a second switching circuit, wherein the first switching circuit is connected between the data line and the bit line, and the second switching circuit is connected between the inverted data line and the inverted bit line; a power switching circuit connected with the bit line, the inverted bit line, the source line and the inverted source line, wherein during a read cycle, an activation period of the word line contains a first period and a second period, wherein in the first period, the first sub-cell generates a first read current to a first current path, which is defined by the data line, the first switching circuit, the bit line, the first sub-cell, the source line and the power switching circuit, wherein in the first period, the second sub-cell generates a second read current to a second current path, which is defined by the inverted data line, the second switching circuit, the inverted bit line, the second sub-cell, the inverted source line and the power switching circuit, wherein the first current path and the second current path are controlled to be opened according to the correlation of the first read current and the second read current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
Specification