HIGH VOLTAGE DRIVER CAPABLE OF PREVENTING HIGH VOLTAGE STRESS ON TRANSISTORS

• US 20190214975A1
• Filed: 07/25/2018
• Published: 07/11/2019
• Est. Priority Date: 01/10/2018
• Status: Active Grant

• Current Assignee: Ememory Technology Inc.
• Original Assignee: Ememory Technology Inc.
• Inventors: Yang, Cheng-Te
• Granted Patent: US 10,505,521 B2
• Time in Patent Office: Days
• CPC Class Codes: H02M 1/32 Means for protecting converters other than automatic disconnection
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps
• CPC Class Codes: H03K 3/356113 using additional transistors in the input circuit
• CPC Class Codes: H03K 3/356182 with additional means for controlling the main nodes

Abstract

A high voltage driver includes a charge pump, a level shift circuit, a first string of diodes, and a second string of diodes. The charge pump adjusts a driving voltage according to a feedback voltage. The level shift circuit generates an output voltage according to the at least one control signal, and the level shift circuit includes a plurality of stacked transistors for relieving a high voltage stress caused by the driving voltage, and a plurality of control transistors coupled to the plurality of stacked transistors for controlling the output voltage. The first string of diodes provides a plurality of divisional voltages between the driving voltage and a reference voltage, and each of the stacked transistors has a control terminal receiving a corresponding divisional voltage of the plurality of divisional voltages. The second string of diodes provides the feedback voltage.

Claims

1. A high voltage driver comprising:

a charge pump having an output terminal configured to output a driving voltage, and a feedback terminal configured to receive a feedback voltage, the charge pump being configured to adjust the driving voltage according to the feedback voltage;

a level shift circuit coupled to the output terminal of the charge pump and a system voltage terminal, and configured to receive at least one control signal and generate an output voltage according to the at least one control signal, the level shift circuit comprising;

a plurality of stacked transistors configured to relieve a high voltage stress caused by the driving voltage; and

a plurality of control transistors coupled to the plurality of stacked transistors and configured to control the output voltage;

a first string of diodes coupled in series between the output terminal of the charge pump and the system voltage terminal, and configured to provide a plurality of divisional voltages between the driving voltage and a reference voltage provided by the system voltage terminal, wherein each of the plurality of stacked transistors has a control terminal configured to receive a corresponding divisional voltage of the plurality of divisional voltages; and

a second string of diodes coupled in series between the output terminal of the charge pump and the system voltage terminal, and configured to provide the feedback voltage.

2. The high voltage driver of claim 1, wherein the first string of diodes and the second string of diodes have same number of diodes.

3. The high voltage driver of claim 1, wherein the plurality of control transistors comprises:

a first control transistor having a first terminal, a second terminal coupled to the system voltage terminal, and a control terminal configured to receive a first control signal;

a second control transistor having a first terminal, a second terminal coupled to the system voltage terminal, and a control terminal configured to receive a second control signal complementary to the first control signal;

a third control transistor having a first terminal coupled to the plurality of stacked transistors, a second terminal coupled to the first terminal of the first control transistor, and a control terminal configured to receive a first divisional voltage of the plurality of divisional voltages;

a fourth control transistor having a first terminal coupled to the plurality of stacked transistors, a second terminal coupled to the first terminal of the second control transistor, and a control terminal configured to receive the first divisional voltage;

a fifth control transistor having a first terminal coupled to the output terminal of the charge pump, a second terminal coupled to the plurality of stacked transistors, and a control terminal; and

a sixth control transistor having a first terminal coupled to the output terminal of the charge pump, a second terminal coupled to the control terminal of the fifth control transistor and the plurality of stacked transistors, and a control terminal coupled to the second terminal of the fifth transistor.

4. The high voltage driver of claim 3, wherein the plurality of stacked transistors comprises:

a first stacked transistor having a first terminal, a second terminal coupled to the first terminal of the third control transistor, and a control terminal configured to receive a second divisional voltage of the plurality of divisional voltages;

a second stacked transistor having a first terminal, a second terminal coupled to the first terminal of the fourth control transistor, and a control terminal configured to receive the second divisional voltage;

a third stacked transistor having a first terminal coupled to the second terminal of the fifth control transistor, a second terminal coupled to the first terminal of the first stacked transistor, and a control terminal configured to receive a third divisional voltage of the plurality of divisional voltages; and

a fourth stacked transistor having a first terminal coupled to the second terminal of the sixth control transistor, a second terminal coupled to the first terminal of the second stacked transistor, and a control terminal configured to receive the third divisional voltage.

5. The high voltage driver of claim 4, wherein the driving voltage is higher than the third divisional voltage, the third divisional voltage is higher than the second divisional voltage, and the second divisional voltage is higher than or substantially equal to the first divisional voltage.

6. The high voltage driver of claim 4, wherein:

the first stacked transistor, the second stacked transistor, the third stacked transistor, and the fourth stacked transistor are P-type transistors;

a body terminal of the first stacked transistor is coupled to the first terminal of the first stacked transistor;

a body terminal of the second stacked transistor is coupled to the first terminal of the second stacked transistor;

a body terminal of the third stacked transistor is coupled to the first terminal of the third stacked transistor; and

a body terminal of the fourth stacked transistor is coupled to the first terminal of the fourth stacked transistor.

7. The high voltage driver of claim 6, wherein:

the first control transistor, the second control transistor, the third control transistor, and the fourth control transistor are N-type transistors;

the fifth control transistor and the sixth control transistor are P-type transistors;

a body terminal of the first control transistor is coupled to the second terminal of the first control transistor;

a body terminal of the second control transistor is coupled to the second terminal of the second control transistor;

a body terminal of the third control transistor is coupled to the second terminal of the third control transistor;

a body terminal of the fourth control transistor is coupled to the second terminal of the fourth control transistor;

a body terminal of the fifth control transistor is coupled to the first terminal of the fifth control transistor; and

a body terminal of the sixth control transistor is coupled to the first terminal of the sixth control transistor.

8. The high voltage driver of claim 1, further comprising:

a comparator configured to output a notification signal by comparing a first reference voltage provided by the first string of diodes and a second reference voltage provided by the second string of diodes;

wherein the charge pump is further configured to adjust the driving voltage according to the notification signal.

9. The high voltage driver of claim 8, wherein during a stable status of the high voltage driver, the first reference voltage is higher than the second reference voltage.

10. The high voltage driver of claim 9, wherein before the high voltage driver enters the stable status, when the first reference voltage is lower than the second reference voltage, the comparator outputs the notification signal to the charge pump to decrease a frequency of a pump clock of the charge pump.

11. The high voltage driver of claim 9, wherein before the high voltage driver enters the stable status, when the first reference voltage is lower than the second reference voltage, the comparator outputs the notification signal to the charge pump to stop the charge pump.

12. The high voltage driver of claim 1, further comprising a capacitor coupled between the output terminal of the charge pump and a node of the first string of diodes providing a divisional voltage of the plurality of divisional voltages.