A METHOD FOR PROCESSING SILICON MATERIAL
First Claim
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1. A method for manufacturing a photovoltaic device, the method comprising the steps of:
- providing a substrate that comprises a silicon p-n junction;
annealing the substrate at a temperature between 500°
C. and 700°
C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction; and
exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of the silicon material are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;
wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.
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Abstract
The present disclosure provides methods for manufacturing a photovoltaic device that comprise a sequence of annealing steps and exposure to electromagnetic radiation during annealing that allow passivating electrically active defects and stabilising the performance of photovoltaic device.
0 Citations
21 Claims
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1. A method for manufacturing a photovoltaic device, the method comprising the steps of:
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providing a substrate that comprises a silicon p-n junction; annealing the substrate at a temperature between 500°
C. and 700°
C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction; andexposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of the silicon material are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated. - View Dependent Claims (3, 7, 8, 9, 10, 14, 15, 16, 17)
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2. A method for manufacturing a photovoltaic device, the method comprising the steps of:
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providing a substrate that comprises a silicon p-n junction; annealing the substrate at a temperature between 300°
C. and 700°
C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the p-n junction;exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of the silicon are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material; andfurther annealing the substrate at a temperature between 200°
C. and 500°
C. for a second predetermined period of time to reduce contact resistance between the metallic electrodes and the silicon material;wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated. - View Dependent Claims (11)
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4. A method for manufacturing a photovoltaic device, the method comprising the steps of:
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providing a substrate that comprises a silicon p-n junction; annealing the substrate at a temperature between 700°
C. and 900°
C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction;annealing the substrate at a temperature between 600°
C. and 700°
C. for a further predetermined period of time; andexposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of the silicon are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated. - View Dependent Claims (6, 12, 13, 18)
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5. A method for manufacturing a photovoltaic device, the method comprising the steps of:
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providing a substrate that comprises a silicon p-n junction; annealing the substrate at a temperature between 700°
C. and 900°
C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the p-n junction;annealing the substrate at a temperature between 250°
C. and 700°
C. for a further predetermined period of time; andexposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of the silicon are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;further annealing the substrate at a temperature between 200°
C. and 500°
C. for a second predetermined period of time to reduce contact resistance between the metallic electrodes and the silicon material;wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.
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19. A method for stabilising the performance of a silicon screen printed photovoltaic device, the method comprising the steps of:
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providing a silicon screen printed photovoltaic device; annealing the screen printed photovoltaic device at a temperature between 500°
C. and 700°
C. for a predetermined period of time; andexposing the device to electromagnetic radiation while the device is kept at a temperature between 150°
C. and 400°
C. in a manner such that photons with an energy higher than that of a bandgap of silicon material provide a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;wherein, during the steps of annealing the device and exposing the device to electromagnetic radiation, electrically active defects in the silicon material are passivated. - View Dependent Claims (20)
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21. (canceled)
Specification