IMAGE SENSOR

• US 20190267413A1
• Filed: 05/09/2019
• Published: 08/29/2019
• Est. Priority Date: 03/29/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Han-seok, PARK, Byung-jun, JEONG, Hee-geun, NAH, Seung-joo
• Granted Patent: US 10,644,053 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14667 Colour imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14694 The active layers comprising only AIIIBV compounds, e.g. GaAs, InP

Abstract

A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

Claims

1. An image sensor comprising:

a substrate comprising a plurality of pixels arranged in a two-dimensional array structure, and having a front side and a back side opposite to the front side;

an interconnection arranged on the front side of the substrate;

an insulating layer arranged on the back side of the substrate;

a pixel separation structure disposed in the substrate, wherein the pixel separation structure separates the plurality of pixels from each other and includes a conductive layer therein; and

a contact disposed on the back side of the substrate and electrically connected the conductive layer of the pixel separation structure.

2. The image sensor of claim 1, wherein the pixel separation structure has a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels.

3. The image sensor of claim 1, wherein the conductive layer penetrates the substrate to be electrically connected to the interconnection.

4. The image sensor of claim 1, wherein a negative voltage or a ground voltage is applied to the conductive layer and the contact through the interconnection.

5. The image sensor of claim 1, wherein a part of the contact is inserted into the conductive layer.

6. The image sensor of claim 1, wherein an upper surface of the contact has one of a circular shape, an elliptical shape, a polygonal shape, and a cross shape.

7. The image sensor of claim 1, wherein the plurality of pixels includes four pixels arranged in two rows and two columns, and

wherein the contact is centered and spaced apart from the four pixels.

8. The image sensor of claim 1, wherein the pixel separation structure has a grid structure in a planar view of the image sensor, and

wherein the contact is disposed in some of grid points of the grid structure.

9. The image sensor of claim 1, wherein each of the plurality of pixels includes a photodiode, and

wherein the photodiode is surrounded by a sidewall insulating layer so that the photodiode is isolated from the conductive layer of the pixel separation structure.

10. The image sensor of claim 1, wherein the conductive layer includes polysilicon, and

wherein the contact includes tungsten (W).

11. An image sensor comprising:

a plurality of pixels each comprising a photodiode and disposed in an array structure on a substrate, the substrate comprising a front side and a back side opposite to the front side;

a pixel separation structure penetrating the substrate, wherein the pixel separation structure separates the plurality of pixels from each other and includes a conductive layer therein; and

a plurality of contacts disposed on the back side of the substrate and electrically connected the conductive layer of the pixel separation structure.

12. The image sensor of claim 11, further comprising an interconnection on the front side of the substrate,

wherein the conductive layer is electrically connected to the interconnection, and

wherein a negative voltage or a ground voltage is applied to the conductive layer and the plurality of contacts through the interconnection.

13. The image sensor of claim 11, further comprising an insulating layer on the back side of the substrate,

wherein each of the plurality of contacts penetrates the insulating layer to be electrically connected the conductive layer.

14. The image sensor of claim 13, wherein the insulating layer includes hafnium oxide (HfOx),

wherein the conductive layer includes polysilicon, and

wherein the plurality of back side contacts includes tungsten (W).

15. The image sensor of claim 11, wherein the pixel separation structure has a grid structure in a planar view of the image sensor, and

wherein the plurality of contact are disposed in some of grid points of the grid structure.

16. An image sensor comprising:

a substrate;

a plurality of photodiodes disposed in an array structure on the substrate;

a pixel separation structure penetrating the substrate, surrounding each of the plurality of photodiodes, separating the plurality of photodiodes from each other, and including a conductive layer therein;

an interconnection arranged on the front side of the substrate and electrically connected to the conductive layer of the pixel separation structure;

an insulating layer arranged on the back side of the substrate; and

a plurality of contacts disposed on the back side of the substrate, penetrating the insulating layer, and electrically connected to the conductive layer of the pixel separation structure.

17. The image sensor of claim 16, further comprising a voltage source,

wherein the plurality of contacts electrically connected to the interconnection through the pixel separation structure, and

wherein a negative voltage or a ground voltage from the voltage source is applied to the conductive layer and the plurality of contacts through the interconnection.

18. The image sensor of claim 16, wherein the pixel separation structure further comprises a plurality of sidewall insulating layers each of which is interposed between the conductive layer and one of the plurality of photodiodes.

19. The image sensor of claim 16, wherein the plurality of contacts are partially inserted into the pixel separation structure.

20. The image sensor of claim 19, wherein the plurality of contacts are partially inserted into the conductive layer of the pixel separation structure.