LAYERED STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE
First Claim
Patent Images
1. A layered structure comprising:
- a base layer; and
a crystalline oxide film comprising a corundum structure and comprising an r-plane as a principal plane, the crystalline oxide film directly on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film with a full width at half maximum (FWHM) of rocking curve that is 0.1°
or less by ω
-scan X-ray diffraction (XRD) measurement.
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Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ω-scan X-ray diffraction (XRD) measurement.
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Citations
20 Claims
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1. A layered structure comprising:
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a base layer; and a crystalline oxide film comprising a corundum structure and comprising an r-plane as a principal plane, the crystalline oxide film directly on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film with a full width at half maximum (FWHM) of rocking curve that is 0.1°
or less by ω
-scan X-ray diffraction (XRD) measurement. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 17, 20)
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8. A layered structure comprising:
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a first layer with a first composition, the first layer comprising a corundum structure and an r-plane as a principal plane; a second layer with a second composition that is different from the first composition; and two or more layers as the first layer and two or more layers as the second layer being alternately stacked to form a superlattice, the two or more layers comprising a crystalline oxide film that comprises a full width at half maximum (FWHM) of rocking curve that is 0.1°
or less by ω
-scan X-ray diffraction (XRD) measurement.
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13. A crystalline oxide semiconductor film comprising:
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at least one crystalline oxide semiconductor selected from a crystalline oxide semiconductor comprising gallium oxide as a major component and a crystalline oxide semiconductor comprising as a major component a mixed crystal comprising gallium oxide with a corundum structure, the crystalline oxide semiconductor film is an r-plane crystalline oxide semiconductor film with a full width at half maximum (FWHM) of rocking curve that is 0.1°
or less by ω
-scan X-ray diffraction (XRD) measurement. - View Dependent Claims (14, 15, 16, 18, 19)
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Specification