MAGNETIC STORAGE DEVICE
First Claim
1. A magnetic storage device comprising:
- a magnetic wire including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable;
a magnetoresistance element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain; and
a read circuit that compares the first resistance of the magnetoresistance element with the second resistance of the magnetoresistance element,wherein the read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states.
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Accused Products
Abstract
A magnetic storage device includes a magnetic storage thin line including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable, a magnetoresistance effect element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain, and a read circuit that compares the first resistance of the magnetoresistance effect element with the second resistance of the magnetoresistance effect element. The read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states.
10 Citations
20 Claims
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1. A magnetic storage device comprising:
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a magnetic wire including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable; a magnetoresistance element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain; and a read circuit that compares the first resistance of the magnetoresistance element with the second resistance of the magnetoresistance element, wherein the read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A magnetic storage device comprising:
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a magnetic wire including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable; a magnetoresistance element having a first resistance when the first magnetic domain is at a position where the magnetoresistance element is subject to influence from magnetic induction by the first magnetic domain and a second resistance when the second magnetic domain is at the position where the magnetoresistance element is subject to influence from magnetic induction by the second magnetic domain; and a read circuit configured generate a first result if the first and second magnetic domains have the same magnetization directions and a second result if the first and second magnetic domains have the different magnetization directions. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification