MAGNETIC MEMORY DEVICE

• US 20190287637A1
• Filed: 09/04/2018
• Published: 09/19/2019
• Est. Priority Date: 03/19/2018
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Inventors: Quinsat, Michael Arnaud, Ootera, Yasuaki, Kondo, Tsuyoshi, Umetsu, Nobuyuki, Shimada, Takuya, Kado, Masaki, Hashimoto, Susumu, Nakamura, Shiho, Aochi, Hideaki, Sanuki, Tomoya, Myano, Shinji, Ueda, Yoshihiro, Ito, Yuichi, Yoshimizu, Yasuhito
• Granted Patent: US 10,446,249 B2
• Time in Patent Office: Days
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1653 Address circuits or decoders
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 19/0808 using magnetic domain propagation
• CPC Class Codes: G11C 19/0841 using electric current
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Claims

1. A magnetic memory device, comprising:

a first interconnect;

a second interconnect;

a first memory portion provided between the first interconnect and the second interconnect;

a controller electrically connected with the first interconnect and the second interconnect;

the first memory portion including

a first magnetic member,

a first magnetic element, and

a first non-linear element,

the first magnetic element being provided between the first magnetic member and the second interconnect in a first current path between the first interconnect and the second interconnect,

the first non-linear element being provided between the first magnetic element and the second interconnect in the first current path,

the controller being configured to supply a first shift current in the first current path in a first shift operation, and

the controller being configured to supply a first reading current in the first current path in a first reading operation.

2. The device according to claim 1, wherein the controller includes:

a first decoder electrically connected with the first interconnect; and

a second decoder electrically connected with the second interconnect.

3. The device according to claim 2, wherein the controller includes:

a shift driver connected with the second decoder; and

a sense amplifier connected with the second decoder.

4. The device according to claim 2, wherein the controller includes:

a shift driver connected with the first decoder; and

a sense amplifier connected with the first decoder.

5. The device according to claim 2, wherein the controller includes:

a shift driver connected with the first decoder; and

a sense amplifier connected with the second decoder.

6. The device according to claim 2, wherein the controller includes:

a shift driver connected with the second decoder; and

a sense amplifier connected with the first decoder.

7. The device according to claim 1, wherein

the first magnetic element includes:

a first magnetic layer, and

a first non-magnetic layer provided between at least a part of the first magnetic member and the first magnetic layer.

8. The device according to claim 7, wherein

the first magnetic element further includes a first intermediate magnetic layer, and

the first intermediate magnetic layer is provided between the at least the part of the first magnetic member and the first non-magnetic layer.

9. The device according to claim 1, wherein

the first non-linear element includes at least one selected from the group consisting of Te, Se, and Ge.

10. The device according to claim 1, wherein

the first magnetic member extends along a first direction,

the first interconnect extends along a second direction crossing the first direction, and

the second interconnect extends along a third direction crossing a plane including the first direction and the second direction.

11. The device according to claim 10, further comprising a first conductive layer electrically connected with the controller and being apart from the first magnetic member,

the controller being configured to supply a first writing current to the first conductive layer in a first writing operation.

12. The device according to claim 11, wherein first information written when the first writing current flows in the first conductive layer in a first orientation is different from second information written when the first writing current flows in the first conductive layer in a second orientation reverse to the first orientation.

13. The device according to claim 1, further comprising:

a third interconnect; and

a second memory portion provided between the third interconnect and the second interconnect,

the controller being further electrically connected with the third interconnect,

the second memory portion including

a second magnetic member,

a second magnetic element, and

a second non-linear element,

the second magnetic element being provided between the second magnetic member and the second interconnect in a second current path between the third interconnect and the second interconnect,

the second linear element being provided between the second magnetic element and the second interconnect in the second current path,

the controller being configured to supply a second shift current in the second current path in a second shift operation, and

the controller being configured to supply a second reading current in the second current path in a second reading operation.

14. The device according to claim 1, wherein

the controller is configured to set the first interconnect at a first potential and to set the second interconnect at a second potential in the first shift operation,

the controller is configured to set the first interconnect at a third potential and to set the second interconnect at a fourth potential in the first reading operation,

the fourth potential is between the first potential and the second potential, and

the fourth potential is between the third potential and the second potential.

15. The device according to claim 1, wherein

the controller is configured to set the first interconnect at a first potential and to set the second interconnect at a second potential in the first shift operation,

the controller is configured to set the first interconnect at a third potential and to set the second interconnect at a fourth potential in the first reading operation,

the third potential is between the first potential and the second potential, and

the third potential is between the first potential and the fourth potential.