SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME
First Claim
1. A semiconductor structure, comprising:
- an insulating substrate comprising a first region and a second region;
an engineered layer surrounding the insulating substrate;
a nucleation layer formed on the engineered layer;
a buffer layer formed on the nucleation layer;
a first epitaxial layer formed on the buffer layer;
a second epitaxial layer formed on the first epitaxial layer;
an isolation structure at least formed in the second epitaxial layer, the first epitaxial layer, the buffer layer and the nucleation layer, and located between the first region and the second region;
a first gate formed on the second epitaxial layer within the first region;
a first source and a first drain formed on the second epitaxial layer within the first region, wherein the first source and the first drain are located on both sides of the first gate;
a second gate formed on the second epitaxial layer within the second region; and
a second source and a second drain formed on the second epitaxial layer within the second region, wherein the second source and the second drain are located on both sides of the second gate.
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Abstract
A semiconductor structure is provided. The semiconductor structure includes an insulating substrate including a first region and a second region; an engineered layer surrounding the insulating substrate; a nucleation layer formed on the engineered layer; a buffer layer formed on the nucleation layer; a first epitaxial layer formed on the buffer layer; a second epitaxial layer formed on the first epitaxial layer; an isolation structure at least formed in the second epitaxial layer, the first epitaxial layer and the nucleation layer, and located between the first region and the second region; a first gate, a first source and a first drain formed on the second epitaxial layer within the first region; and a second gate, a second source, and a second drain formed on the second epitaxial layer within the second region.
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Citations
29 Claims
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1. A semiconductor structure, comprising:
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an insulating substrate comprising a first region and a second region; an engineered layer surrounding the insulating substrate; a nucleation layer formed on the engineered layer; a buffer layer formed on the nucleation layer; a first epitaxial layer formed on the buffer layer; a second epitaxial layer formed on the first epitaxial layer; an isolation structure at least formed in the second epitaxial layer, the first epitaxial layer, the buffer layer and the nucleation layer, and located between the first region and the second region; a first gate formed on the second epitaxial layer within the first region; a first source and a first drain formed on the second epitaxial layer within the first region, wherein the first source and the first drain are located on both sides of the first gate; a second gate formed on the second epitaxial layer within the second region; and a second source and a second drain formed on the second epitaxial layer within the second region, wherein the second source and the second drain are located on both sides of the second gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for fabricating a semiconductor structure, comprising:
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providing an insulating substrate comprising a first region and a second region with an engineered layer surrounding the insulating substrate; forming a nucleation layer on the engineered layer; forming a buffer layer on the nucleation layer; forming a first epitaxial layer on the buffer layer; forming a second epitaxial layer on the first epitaxial layer; forming an isolation structure at least in the second epitaxial layer, the first epitaxial layer, the buffer layer and the nucleation layer, and located between the first region and the second region; forming a first gate on the second epitaxial layer within the first region; forming a first source and a first drain on the second epitaxial layer within the first region, wherein the first source and the first drain are located on both sides of the first gate; forming a second gate on the second epitaxial layer within the second region; and forming a second source and a second drain on the second epitaxial layer within the second region, wherein the second source and the second drain are located on both sides of the second gate. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification