PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS
First Claim
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1. A process, comprising depositing a compound of formula (I):
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Abstract
The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.
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Citations
14 Claims
- 1. A process, comprising depositing a compound of formula (I):
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12. A process, comprising forming a film of the compound of general formula (I), wherein:
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R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.
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13. A compound of formula (Ia), wherein the compound of formula (I) is a compound of formula (Ia):
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14. A compound of formula (I):
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