×

EUV EXPOSURE APPARATUS WITH REFLECTIVE ELEMENTS HAVING REDUCED INFLUENCE OF TEMPERATURE VARIATION

  • US 20190310555A1
  • Filed: 04/23/2019
  • Published: 10/10/2019
  • Est. Priority Date: 07/30/2010
  • Status: Active Grant
First Claim
Patent Images

1. A projection lens of an EUV-lithographic projection exposure system, comprising:

  • a plurality of reflective optical elements Mi, each comprisinga body MBi and a reflective surface MSi for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light with a wavelength in a wavelength range of less than 50 nm, being reflected from the reticle while illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein the lens comprisessupport means for passively or actively supporting at least one optical element Mk,a pressure control system for the control of the pressure Δ

    p within a surrounding of the at least one reflective optical element Mk,wherein the control is based on a parameter selected from a group consisting of the temperature of the optical element Mk, the time, a parameter which directly or indirectly influence the temperature of the optical element Mk, an illumination setting, a change of the reticle, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and an output parameter from a model,the model input comprising data selected from the group consisting of the temperature of the reflective optical element Mk, the time, a parameter which directly or indirectly influences the temperature of the optical element Mk, an illumination setting, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and a change of the reticle.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×