EUV EXPOSURE APPARATUS WITH REFLECTIVE ELEMENTS HAVING REDUCED INFLUENCE OF TEMPERATURE VARIATION
First Claim
1. A projection lens of an EUV-lithographic projection exposure system, comprising:
- a plurality of reflective optical elements Mi, each comprisinga body MBi and a reflective surface MSi for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light with a wavelength in a wavelength range of less than 50 nm, being reflected from the reticle while illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein the lens comprisessupport means for passively or actively supporting at least one optical element Mk,a pressure control system for the control of the pressure Δ
p within a surrounding of the at least one reflective optical element Mk,wherein the control is based on a parameter selected from a group consisting of the temperature of the optical element Mk, the time, a parameter which directly or indirectly influence the temperature of the optical element Mk, an illumination setting, a change of the reticle, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and an output parameter from a model,the model input comprising data selected from the group consisting of the temperature of the reflective optical element Mk, the time, a parameter which directly or indirectly influences the temperature of the optical element Mk, an illumination setting, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and a change of the reticle.
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Abstract
A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.
2 Citations
15 Claims
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1. A projection lens of an EUV-lithographic projection exposure system, comprising:
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a plurality of reflective optical elements Mi, each comprising a body MBi and a reflective surface MSi for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light with a wavelength in a wavelength range of less than 50 nm, being reflected from the reticle while illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein the lens comprises support means for passively or actively supporting at least one optical element Mk, a pressure control system for the control of the pressure Δ
p within a surrounding of the at least one reflective optical element Mk,wherein the control is based on a parameter selected from a group consisting of the temperature of the optical element Mk, the time, a parameter which directly or indirectly influence the temperature of the optical element Mk, an illumination setting, a change of the reticle, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and an output parameter from a model, the model input comprising data selected from the group consisting of the temperature of the reflective optical element Mk, the time, a parameter which directly or indirectly influences the temperature of the optical element Mk, an illumination setting, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and a change of the reticle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A projection lens of an EUV-lithographic projection exposure system, comprising
a plurality of reflective optical elements Mi, each comprising a body MBi and a reflective surface MSi for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light with a wavelength in a wavelength range of less than 50 nm, being reflected from the reticle while illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein the lens comprises support means for passively or actively supporting at least one optical element Mk, and, a pressure control system for the control of the pressure Δ - p within a surrounding of the at least one reflective optical element Mk,
wherein the control is based on a parameter selected from a group including the temperature of the optical element Mk, the time, a parameter which directly or indirectly influence the temperature of the optical element Mk, an illumination setting, a change of the reticle, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and an output parameter from a model, the model input comprising data selected from the group including the temperature of the reflective optical element Mk, the time, a parameter which directly or indirectly influences the temperature of the optical element Mk, an illumination setting, thermally or mechanically induced optical aberration data of the optical element Mk or the projection lens and a change of the reticle. - View Dependent Claims (14, 15)
- p within a surrounding of the at least one reflective optical element Mk,
Specification