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METHOD OF ETCH MODEL CALIBRATION USING OPTICAL SCATTEROMETRY

  • US 20190311083A1
  • Filed: 04/06/2018
  • Published: 10/10/2019
  • Est. Priority Date: 04/06/2018
  • Status: Active Grant
First Claim
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1. A computer-implemented method of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation from process parameter values characterizing the semiconductor device fabrication operation, the method comprising:

  • (a) receiving current values of one or more floated process model parameters to be optimized;

    (b) producing a configured process simulation model by providing to the process simulation model the current values of the one or more floated process model parameters and a set of fixed process model parameter value(s);

    (c) generating, using the configured process simulation model, a computationally predicted result of the semiconductor device fabrication operation;

    (d) comparing the computationally predicted result of the semiconductor device fabrication operation with a metrology result obtained from one or more substrate features produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under the set of fixed process parameter values, wherein the comparing produces one or more cost values based on a difference between the computationally predicted result of the semiconductor device fabrication operation and the metrology result;

    (e) using the one or more cost values and/or a convergence check to generate an update of the current values of the one or more floated process model parameters;

    (f) performing operation (b) with the update of the current values of the one or more floated process model parameters; and

    (g) repeating (c)-(f) until the current values of the one or more floated process model parameters converge to produce final values of the one or more floated process model parameters that minimize the cost values.

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