METHOD TO FABRICATE THERMALLY STABLE LOW K-FINFET SPACER
First Claim
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1. A method of forming a spacer layer, the method comprising:
- disposing a substrate in an internal volume of a processing chamber, the substrate having a film formed thereon, the film comprising silicon, carbon, nitrogen, and hydrogen;
introducing a process gas into the processing chamber, wherein the process gas comprises high pressure steam;
exposing the film to the process gas to form a reacted film, such that the reacted film comprises silicon, carbon, oxygen, and hydrogen; and
purging the internal volume with an inert gas.
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Abstract
A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.
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Citations
20 Claims
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1. A method of forming a spacer layer, the method comprising:
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disposing a substrate in an internal volume of a processing chamber, the substrate having a film formed thereon, the film comprising silicon, carbon, nitrogen, and hydrogen; introducing a process gas into the processing chamber, wherein the process gas comprises high pressure steam; exposing the film to the process gas to form a reacted film, such that the reacted film comprises silicon, carbon, oxygen, and hydrogen; and purging the internal volume with an inert gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a spacer layer, the method comprising:
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disposing a substrate in an internal volume of a processing chamber, the substrate having a film formed thereon, the film comprising silicon, carbon, nitrogen, and hydrogen; introducing a process gas into the processing chamber, wherein the process gas comprises high pressure steam; exposing the film to the process gas to form a reacted film, such that the reacted film comprises silicon, carbon, oxygen, and hydrogen; purging the internal volume with an inert gas; and treating the reacted film with a hydrogen anneal. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a spacer layer, the method comprising:
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disposing a substrate in an internal volume of a processing chamber, the substrate having a film formed thereon, the film comprising silicon, carbon, nitrogen, and hydrogen, the substrate comprising silicon and germanium; introducing a process gas into the processing chamber, wherein the process gas comprises high pressure steam; exposing the film to the process gas to form a reacted film, such that the reacted film comprises silicon, carbon, oxygen, and hydrogen; purging the internal volume with an inert gas; and treating the reacted film with a hydrogen anneal. - View Dependent Claims (19, 20)
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Specification