SYSTEMS AND METHODS FOR MATERIAL BREAKTHROUGH
1 Assignment
0 Petitions
Accused Products
Abstract
Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.
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Citations
34 Claims
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1-7. -7. (canceled)
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8. An etching method comprising:
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forming a treatment gas plasma within a processing region of a semiconductor processing chamber; modifying a surface of a first material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the treatment gas plasma; modifying a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma; forming a remote plasma from a fluorine-containing precursor to produce fluorine-containing plasma effluents; flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber; flowing water vapor to the processing region of the semiconductor processing chamber; and selectively removing the modified surface of the first material from the semiconductor substrate. - View Dependent Claims (9, 10, 11, 12, 13)
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14-20. -20. (canceled)
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21. An etching method comprising:
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forming a treatment gas plasma within a processing region of a semiconductor processing chamber; modifying a surface of a first material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the treatment gas plasma, wherein the semiconductor substrate further comprises a second material different from the first material; forming a remote plasma from a fluorine-containing precursor to produce fluorine-containing plasma effluents; flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber; flowing water vapor to the processing region of the semiconductor processing chamber; and selectively removing the modified surface of the first material from the semiconductor substrate. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. An etching method comprising:
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forming a treatment gas plasma within a processing region of a semiconductor processing chamber; modifying a surface of a first material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the treatment gas plasma; modifying a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma; forming a remote plasma from a fluorine-containing precursor to produce fluorine-containing plasma effluents; flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber; flowing water vapor to the processing region of the semiconductor processing chamber to combine with the fluorine-containing plasma effluents; and selectively removing the modified surface of the first material from the semiconductor substrate. - View Dependent Claims (29, 30, 31, 32, 33, 34)
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Specification