GAS-PHASE SELECTIVE ETCHING SYSTEMS AND METHODS
First Claim
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1. A method of etching a semiconductor substrate, the method comprising:
- flowing an oxygen-containing precursor into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material;
flowing ammonia into the substrate processing region at a temperature above about 200°
C.; and
removing an amount of the metal-containing material.
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Abstract
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.
25 Citations
20 Claims
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1. A method of etching a semiconductor substrate, the method comprising:
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flowing an oxygen-containing precursor into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material; flowing ammonia into the substrate processing region at a temperature above about 200°
C.; andremoving an amount of the metal-containing material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of etching a semiconductor substrate, the method comprising:
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removing a native oxide from a metal-containing material exposed on the semiconductor substrate; flowing ozone into a substrate processing region housing the semiconductor substrate; holding for a first period of time greater than or about 1 second; flowing a nitrogen-containing precursor into the substrate processing region; holding for a second period of time greater than or about 1 second; and removing an amount of the metal-containing material. - View Dependent Claims (17, 18, 19, 20)
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Specification