DEVICE FOR HANDLING A SEMICONDUCTOR WAFER IN AN EPITAXY REACTOR AND METHOD FOR PRODUCING A SEMICONDUCTOR WAFER HAVING AN EPITAXIAL LAYER

• US 20190311941A1
• Filed: 07/03/2017
• Published: 10/10/2019
• Est. Priority Date: 07/13/2016
• Status: Active Grant

• Current Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Original Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Inventors: MOOS, Patrick, HECHT, Hannes
• Granted Patent: US 11,302,565 B2
• Time in Patent Office: Days
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft

Abstract

A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.

Claims

1-7. -7. (canceled)

8. A device for handling a semiconductor wafer in an epitaxy reactor, comprising:

a susceptor;

longitudinal holes extending through the susceptor;

a wafer lifting shaft;

wafer lifting pins, which are guided through the longitudinal holes;

a susceptor carrying shaft;

susceptor carrying arms;

susceptor support pins;

guide sleeves, which are anchored in the susceptor carrying arms; and

guide elements, which protrude from the guide sleeves and, at upper ends, have bores into which the wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by means of the wafer lifting shaft.

9. The device of claim 8, wherein the susceptor carrying arms form a one-piece star-shaped element, which is screwed onto an upper end of the susceptor carrying shaft.

10. The device of claim 8, wherein the guide elements and the wafer lifting pins have a different thermal expansion, and are manufactured with tolerances which are dimensioned in such a way that a clamping connection is formed between the guide elements and the wafer lifting pins at temperatures of more than 900°

C.

11. The device of claim 9, wherein the guide elements and the wafer lifting pins have a different thermal expansion, and are manufactured with tolerances which are dimensioned in such a way that a clamping connection is formed between the guide elements and the wafer lifting pins at temperatures of more than 900°

C.

12. The device of claim 8, further comprising upright elements, which are connected height-adjustably to the susceptor carrying arms at the outer ends of the latter and have axial bores into which the susceptor support pins are inserted, the susceptor support pins having spherically rounded heads.

13. The device of claim 9, further comprising upright elements, which are connected height-adjustably to the susceptor carrying arms at the outer ends of the latter and have axial bores into which the susceptor support pins are inserted, the susceptor support pins having spherically rounded heads.

14. The device of claim 10, further comprising upright elements, which are connected height-adjustably to the susceptor carrying arms at the outer ends of the latter and have axial bores into which the susceptor support pins are inserted, the susceptor support pins having spherically rounded heads.

15. The device of claim 11, further comprising upright elements, which are connected height-adjustably to the susceptor carrying arms at the outer ends of the latter and have axial bores into which the susceptor support pins are inserted, the susceptor support pins having spherically rounded heads.

16. The device of claim 12, further comprising elongate blind holes on a rear side of the susceptor for receiving the spherically rounded heads of the susceptor support pins, the length and width of the blind holes increasing in a direction of the opening of the blind holes.

17. A method for producing a semiconductor wafer having an epitaxial layer, comprising:

providing a device claim 8 in an epitaxy reactor;

placing a semiconductor wafer on the wafer lifting pins;

placing the semiconductor wafer on the susceptor by lowering the wafer lifting pins;

depositing an epitaxial layer on the semiconductor wafer to form an epitaxially coated semiconductor wafer;

raising the epitaxially coated semiconductor wafer from the susceptor by raising the wafer lifting pins; and

removing the semiconductor wafer with the epitaxial layer from the epitaxy reactor.

18. A method for producing a semiconductor wafer having an epitaxial layer, comprising:

providing a device claim 10 in an epitaxy reactor;

placing a semiconductor wafer on the wafer lifting pins;

placing the semiconductor wafer on the susceptor by lowering the wafer lifting pins;

depositing an epitaxial layer on the semiconductor wafer to form an epitaxially coated semiconductor wafer;

raising the epitaxially coated semiconductor wafer from the susceptor by raising the wafer lifting pins; and

removing the semiconductor wafer with the epitaxial layer from the epitaxy reactor.

19. A method for producing a semiconductor wafer having an epitaxial layer, comprising:

providing a device claim 12 in an epitaxy reactor;

placing a semiconductor wafer on the wafer lifting pins;

placing the semiconductor wafer on the susceptor by lowering the wafer lifting pins;

depositing an epitaxial layer on the semiconductor wafer to form an epitaxially coated semiconductor wafer;

raising the epitaxially coated semiconductor wafer from the susceptor by raising the wafer lifting pins; and

removing the semiconductor wafer with the epitaxial layer from the epitaxy reactor.

20. A method for producing a semiconductor wafer having an epitaxial layer, comprising:

providing a device claim 16 in an epitaxy reactor;

placing a semiconductor wafer on the wafer lifting pins;

placing the semiconductor wafer on the susceptor by lowering the wafer lifting pins;

depositing an epitaxial layer on the semiconductor wafer to form an epitaxially coated semiconductor wafer;

raising the epitaxially coated semiconductor wafer from the susceptor by raising the wafer lifting pins; and

removing the semiconductor wafer with the epitaxial layer from the epitaxy reactor.

21. The method of claim 12, wherein the epitaxial layer is deposited on a semiconductor wafer of monocrystalline silicon.