METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPACITANCE INTERCONNECTS
First Claim
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1. A substrate processing method, comprising:
- providing a substrate containing raised features with top areas and sidewalls, and bottom areas between the raised features; and
exposing the substrate to a gas pulse sequence to deposit a material that forms an air gap between the raised features, wherein the gas pulse sequence includes, in any order;
a) sequentially first, exposing the substrate to a first precursor gas to non-conformally form a first precursor layer on the top areas and on the upper parts of the sidewalls, but not on the lower parts of the sidewalls and the bottom areas, and second, exposing the substrate to a second precursor gas that reacts with the first precursor layer to form a first layer of the material on the substrate, andb) sequentially first, exposing the substrate to the first precursor gas to conformally form a second precursor layer on the top areas, on the sidewalls, and on the bottom areas, and second, exposing the substrate to the second precursor gas that reacts with the second precursor layer to form a second layer of the material on the substrate.
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Abstract
A method of fabricating air gaps in advanced semiconductor devices for low capacitance interconnects. The method includes exposing a substrate to a gas pulse sequence to deposit a material that forms an air gap between raised features.
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Citations
20 Claims
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1. A substrate processing method, comprising:
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providing a substrate containing raised features with top areas and sidewalls, and bottom areas between the raised features; and exposing the substrate to a gas pulse sequence to deposit a material that forms an air gap between the raised features, wherein the gas pulse sequence includes, in any order; a) sequentially first, exposing the substrate to a first precursor gas to non-conformally form a first precursor layer on the top areas and on the upper parts of the sidewalls, but not on the lower parts of the sidewalls and the bottom areas, and second, exposing the substrate to a second precursor gas that reacts with the first precursor layer to form a first layer of the material on the substrate, and b) sequentially first, exposing the substrate to the first precursor gas to conformally form a second precursor layer on the top areas, on the sidewalls, and on the bottom areas, and second, exposing the substrate to the second precursor gas that reacts with the second precursor layer to form a second layer of the material on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A substrate processing method, comprising:
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providing a substrate containing raised features with top areas and sidewalls, and bottom areas between the raised features; and exposing the substrate to a gas pulse sequence to deposit a material that forms an air gap between the raised features, wherein the gas pulse sequence includes, in any order; a) sequentially first, exposing the substrate to a first precursor gas to conformally form a first precursor layer on the top areas, on the sidewalls, and on the bottom areas, second, exposing the substrate to a plasma-excited halogen-containing gas to deactivate or at least partially remove the first precursor layer in the top areas and the bottom areas, and third, exposing the substrate to the second precursor gas that reacts with the precursor layer to form a first layer of the material on the sidewalls, and b) sequentially first, exposing the substrate to the first precursor gas to conformally form a second precursor layer on the top areas, on the sidewalls, and on the bottom areas, and second, exposing the substrate to the second precursor gas that reacts with the second precursor layer form a second layer of the material on the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification