BONDING SYSTEM AND BONDING METHOD

• US 20190312007A1
• Filed: 04/04/2019
• Published: 10/10/2019
• Est. Priority Date: 04/05/2018
• Status: Active Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nagata, Atsushi, Maeda, Hiroshi, Sugakawa, Kenji
• Granted Patent: US 10,847,495 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 2224/751 Means for controlling the bonding environment, e.g. valves, vacuum pumps
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector

Abstract

A bonding system includes a surface modifying apparatus, a surface hydrophilizing apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma. The surface hydrophilizing apparatus is configured to hydrophilize the modified bonding surfaces of the first substrate and the second substrate. The bonding apparatus includes a condensation suppressing gas discharge unit, and is configured to bond the hydrophilized bonding surfaces of the first substrate and the second substrate by an intermolecular force. The condensation suppressing gas discharge unit is configured to discharge a condensation suppressing gas toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other.

Claims

1. A bonding system, comprising:

a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma;

a surface hydrophilizing apparatus configured to hydrophilize the bonding surface of the first substrate and the bonding surface of the second substrate which have been modified by the surface modifying apparatus; and

a bonding apparatus, including a condensation suppressing gas discharge unit configured to discharge a condensation suppressing gas configured to suppress condensation toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other, configured to bond the bonding surface of the first substrate and the bonding surface of the second substrate, which have been hydrophilized by the surface hydrophilizing apparatus, by an intermolecular force.

2. The bonding system of claim 1,

wherein the condensation suppressing gas includes an inert gas.

3. The bonding system of claim 2,

wherein the condensation suppressing gas includes a He gas.

4. The bonding system of claim 1,

wherein the condensation suppressing gas includes dry air.

5. The bonding system of claim 1,

wherein the condensation suppressing gas discharge unit is equipped with a main body that has a circular ring shape and includes discharge openings through which the condensation suppressing gas is discharged.

6. The bonding system of claim 5,

wherein the discharge openings are uniformly formed along a circumferential direction in the main body of the condensation suppressing gas discharge unit.

7. A bonding method, comprising:

modifying a bonding surface of a first substrate and a bonding surface of a second substrate;

hydrophilizing the modified bonding surface of the first substrate and the modified bonding surface of the second substrate;

discharging a condensation suppressing gas configured to suppress condensation toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other; and

bonding the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate by an intermolecular force.