METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MOUNTING DEVICE
First Claim
1. A method of manufacturing a semiconductor device in which one or more semiconductor chips are laminated and mounted in a plurality of locations on a substrate, comprising:
- a temporary crimping step of sequentially laminating the one or more semiconductor chips in each of two or more locations on the substrate while temporarily crimping the one or more semiconductor chips to thereby form chip stacks in a temporarily crimped state; and
a permanent crimping step of sequentially heating and pressurizing top surfaces of all of the chip stacks formed in the temporarily crimped state to thereby collectively permanently crimp the one or more semiconductor chips which form each of the chip stacks,wherein the methodrepeats the temporary crimping step and the permanent crimping step twice or more until a desired number of the chip stacks are reached,further comprises a specifying step prior to the temporary crimping step for specifying a separation distance which is a distance from the chip stacks under permanent crimping to a location at which a temperature of the substrate, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature,in the temporary crimping step, forms the chip stacks in the temporarily crimped state to be separated from each other by the separation distance or more, andin the permanent crimping step, permanently crimps the chip stacks which are in the temporarily crimped state and are formed separated from each other by the separation distance or more.
1 Assignment
0 Petitions
Accused Products
Abstract
The disclosure is provided with: a temporary crimping step in which one or more semiconductor chips 10 are sequentially laminated while being temporarily crimped in each of two or more locations on a substrate 30 to thereby form chip stacks ST in a temporarily crimped state; and a permanent crimping step in which the top surfaces of all of the chip stacks ST formed in the temporarily crimped state are sequentially heated, pressurized, and permanently crimped. Furthermore, a specifying step is provided prior to the temporary crimping step for specifying a separation distance Dd which is the distance from the chip stacks ST under permanent crimping to a location at which the temperature of the substrate 30, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature Td, and in the temporary crimping step, the chip stacks ST in the temporarily crimped state are formed separated from each other by the separation distance Dd or more.
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Citations
10 Claims
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1. A method of manufacturing a semiconductor device in which one or more semiconductor chips are laminated and mounted in a plurality of locations on a substrate, comprising:
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a temporary crimping step of sequentially laminating the one or more semiconductor chips in each of two or more locations on the substrate while temporarily crimping the one or more semiconductor chips to thereby form chip stacks in a temporarily crimped state; and a permanent crimping step of sequentially heating and pressurizing top surfaces of all of the chip stacks formed in the temporarily crimped state to thereby collectively permanently crimp the one or more semiconductor chips which form each of the chip stacks, wherein the method repeats the temporary crimping step and the permanent crimping step twice or more until a desired number of the chip stacks are reached, further comprises a specifying step prior to the temporary crimping step for specifying a separation distance which is a distance from the chip stacks under permanent crimping to a location at which a temperature of the substrate, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature, in the temporary crimping step, forms the chip stacks in the temporarily crimped state to be separated from each other by the separation distance or more, and in the permanent crimping step, permanently crimps the chip stacks which are in the temporarily crimped state and are formed separated from each other by the separation distance or more. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device, comprising:
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a temporary crimping step of sequentially laminating one or more semiconductor chips in each of two or more locations on a substrate while temporarily crimping the one or more semiconductor chips to thereby form chip stacks in a temporarily crimped state; and a permanent crimping step of repeating twice or more a process of simultaneously heating and pressurizing top surfaces of the two or more chip stacks in the temporarily crimped state and simultaneously performing permanent crimping to change all of the chip stacks in the temporarily crimped state formed in the temporary crimping step to a permanently crimped state, wherein the method repeats the temporary crimping step and the permanent crimping step twice or more until a desired number of the chip stacks are reached, further comprises a specifying step prior to the temporary crimping step for specifying a separation distance which is a distance from the chip stacks under permanent crimping to a location at which a temperature of the substrate, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature, and in the temporary crimping step, forms the chip stacks in the temporarily crimped state not to be permanently crimped simultaneously to be separated from each other by the separation distance or more.
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9. A mounting device for laminating and mounting one or more semiconductor chips in a plurality of locations on a substrate, comprising:
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a temporary crimping means of sequentially laminating the one or more semiconductor chips in each of two or more locations on the substrate while temporarily crimping the one or more semiconductor chips to thereby form chip stacks in a temporarily crimped state; a permanent crimping means of sequentially heating and pressurizing top surfaces of all of the chip stacks formed in the temporarily crimped state to thereby collectively permanently crimp the one or more semiconductor chips which form each of the chip stacks; and a separation distance specifying means for specifying a separation distance prior to the temporary crimping, the separation distance being a distance from the chip stacks under permanent crimping to a location at which a temperature of the substrate, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature, wherein the temporary crimping means forms the chip stacks in the temporarily crimped state to be separated from each other by the separation distance or more, and the permanent crimping means permanently crimps the chip stacks which are in the temporarily crimped state and are formed separated from each other by the separation distance or more.
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10. A mounting device for laminating and mounting one or more semiconductor chips in a plurality of locations on a substrate, comprising:
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a bonding part for sequentially laminating the one or more semiconductor chips in each of two or more locations on the substrate while temporarily crimping the one or more semiconductor chips to thereby form chip stacks in a temporarily crimped state and for sequentially heating and pressurizing top surfaces of all of the chip stacks formed in the temporarily crimped state to thereby collectively permanently crimp the one or more semiconductor chips which form each of the chip stacks; a separation distance specifying means for specifying a separation distance prior to the temporary crimping, the separation distance being a distance from the chip stacks under permanent crimping to a location at which a temperature of the substrate, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature; and a control part for controlling the bonding part so that after the chip stacks in the temporarily crimped state are formed separated from each other by the separation distance or more, the chip stacks formed in the temporarily crimped state are permanently crimped.
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Specification