SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate; and
an active region through which current flows, provided on the semiconductor substrate, the active region including a first element region and a plurality of second element regions, whereinthe first element region includes a first element having a first trench gate structure, the first trench gate structure includinga first trench provided on a first main surface side of the semiconductor substrate, anda first gate electrode provided in the first trench via a first gate insulating film,the plurality of second element regions each include a second element having a second trench gate structure, the second trench gate structure includinga second trench provided on the first main surface side of the semiconductor substrate, separated from the first trench, anda second gate electrode provided in the second trench via a second gate insulating film, andthe first element region is a single continuous region in which the plurality of second element regions are disposed, the second element regions being spaced apart from each other.
1 Assignment
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Accused Products
Abstract
An IGBT region in which an IGBT is disposed and a FWD region in which a FWD connected in antiparallel to the IGBT is disposed are provided in an active region of a semiconductor chip. In the active region, the FWD region is provided in plural separated from each other. The IGBT region is a continuous region between the FWD regions. In the IGBT region and the FWD region, first and second gate trenches are disposed in striped-shape layouts that are parallel to a front surface of the semiconductor chip and extend along a same first direction. The second gate trenches of the FWDs of the FWD regions are disposed separated from the first gate trenches of the IGBT in the IGBT region. This structure enables degradation of element characteristics to be prevented, and heat dissipation of the semiconductor chip and the degrees of freedom in design to be enhanced.
13 Citations
18 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; and an active region through which current flows, provided on the semiconductor substrate, the active region including a first element region and a plurality of second element regions, wherein the first element region includes a first element having a first trench gate structure, the first trench gate structure including a first trench provided on a first main surface side of the semiconductor substrate, and a first gate electrode provided in the first trench via a first gate insulating film, the plurality of second element regions each include a second element having a second trench gate structure, the second trench gate structure including a second trench provided on the first main surface side of the semiconductor substrate, separated from the first trench, and a second gate electrode provided in the second trench via a second gate insulating film, and the first element region is a single continuous region in which the plurality of second element regions are disposed, the second element regions being spaced apart from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification