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SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

  • US 20190312030A1
  • Filed: 06/05/2019
  • Published: 10/10/2019
  • Est. Priority Date: 10/30/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a fin-shaped active region protruding from a substrate;

    a field insulating layer on the substrate, the field insulating layer being on a side of a lower portion of the fin-shaped active region and absent from an upper portion of the fin-shaped active region;

    a gate insulating layer extending along an upper surface of the field insulating layer and three sides of the fin-shaped active region; and

    a gate electrode structure on the gate insulating layer, the gate electrode structure comprising a silicon oxide layer spaced apart from the gate insulating layer and a barrier metal layer between the silicon oxide layer and the gate insulating layer,wherein the three sides of the fin-shaped active region include top, right, and left sides of the fin-shaped active region.

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