SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20190312119A1
• Filed: 06/05/2019
• Published: 10/10/2019
• Est. Priority Date: 03/02/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHO, Eunae, Lee, Dongjin, Lee, Ji Eun, Jung, Kyoung-Ho, Ko, Dong Su, Kim, Yongsu, Yoo, Jiho, Heo, Sung, Park, Hyun, Yamada, Satoru, Jeong, Moonyoung, Kim, Sungjin, Park, Gyeongsu, Lim, Han Jin
• Granted Patent: US 11,127,828 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Claims

1. A semiconductor device comprising:

a substrate comprising a trench;

a gate insulating film disposed in the trench;

a gate electrode disposed in the trench, the gate electrode being disposed on the gate insulating film,

wherein the gate electrode comprises a gate conductor and a metal atom that is distributed in the gate conductor, and

an effective work function of the gate electrode is different from an effective work function of the gate conductor.

2. The semiconductor device of claim 1, wherein the effective work function of the gate electrode is different from the effective work function of the gate conductor by about 0.10 eV to about 1.40 eV.

3. The semiconductor device of claim 1, wherein the effective work function of the gate electrode is less than the effective work function of the gate conductor.

4. The semiconductor device of claim 1, wherein the effective work function of the gate electrode is in range from about 3.1 eV to about 4.7 eV.

5. The semiconductor device of claim 1, wherein a work function and an electronegativity of the metal atom are less than a work function and an electronegativity of the gate conductor.

6. The semiconductor device of claim 1, wherein of the metal atom have a work function of less than or equal to about 4.20 eV.

7. The semiconductor device of claim 1, wherein the gate conductor comprises a titanium-containing conductor, and

the metal atom comprises lanthanum (La), strontium (Sr), yttrium (Y), lithium (Li), manganese (Mn), silicon (Si), or a combination thereof.

8. The semiconductor device of claim 7, wherein the gate conductor comprises titanium, titanium nitride, titanium oxynitride, or a combination thereof.

9. The semiconductor device of claim 1, wherein the gate conductor is chemically bonded with the metal atom.

10. The semiconductor device of claim 1, wherein an amount of the metal atom is in a range from about 0.01 at % to about 10 at % based on a total atom number of the gate conductor and the metal atom.

11. The semiconductor device of claim 1, wherein the gate insulating film is an oxide film, and the gate electrode contacts the gate insulating film.

12. The semiconductor device of claim 1, wherein the gate insulating film and the gate electrode are a thin film in the trench along an interior wall of the substrate, respectively.