SEMICONDUCTOR DEVICE

• US 20190312134A1
• Filed: 02/20/2019
• Published: 10/10/2019
• Est. Priority Date: 04/04/2018
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: IKURA, Yoshihiro, NAKAGAWA, Akio
• Granted Patent: US 10,910,486 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0804 Emitter regions of bipolar transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41708 Emitter or collector electrodes for bipolar transistors
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

The present invention provides a semiconductor device including (a) a drift region of a first-conductivity-type, (b) a base region of a second-conductivity-type, (c) a plurality of trench portions arranged next to each other in a predetermined arrangement direction on the upper surface of the semiconductor substrate, (d) an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region, (e) an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region, and (f) a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region, wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions.

Claims

1. A semiconductor device comprising:

a drift region of a first-conductivity-type provided in a semiconductor substrate;

a base region of a second-conductivity-type provided above the drift region on an upper surface side in the semiconductor substrate;

a plurality of trench portions arranged next to each other in a predetermined arrangement direction on an upper surface of the semiconductor substrate;

an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions;

an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions; and

a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region and is provided in a mesa portion between adjacent ones of the plurality of trench portions;

wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions.

2. The semiconductor device according to claim 1, further comprising an emitter electrode provided above the semiconductor substrate, wherein

the non-channel mesa portion is electrically connected to the emitter electrode.

3. The semiconductor device according to claim 1, wherein

the accumulation region is provided above the second-conductivity-type region and below the base region.

4. The semiconductor device according to claim 3, further comprising

a first-conductivity-type region of a first-conductivity-type which has a lower doping concentration than the accumulation region and is provided between the base region and the second-conductivity-type region in the non-channel mesa portion.

5. The semiconductor device according to claim 4, wherein

the first-conductivity-type region has a same doping concentration as the drift region.

6. The semiconductor device according to claim 4, wherein

the first-conductivity-type region is provided above the accumulation region.

7. The semiconductor device according to claim 4, wherein

the first-conductivity-type region is provided below the accumulation region.

8. The semiconductor device according to claim 1, wherein

the second-conductivity-type region is in contact with a lower end of the accumulation region.

9. The semiconductor device according to claim 1, comprising a channel mesa portion which is the mesa portion in which the emitter region is provided, wherein

the accumulation region is provided in both the channel mesa portion and the non-channel mesa portion, and

the accumulation region in the non-channel mesa portion has a same depth as the accumulation region in the channel mesa portion.

10. The semiconductor device according to claim 1, comprising a channel mesa portion which is the mesa portion in which the emitter region is provided, wherein

the accumulation region is provided in both the channel mesa portion and the non-channel mesa portion, and

the accumulation region in the non-channel mesa portion has a different depth from the accumulation region in the channel mesa portion.

11. The semiconductor device according to claim 9, wherein

the base region in the non-channel mesa portion is deeper than the base region in the channel mesa portion.

12. The semiconductor device according to claim 9, further comprising

a contact region which is provided in the channel mesa portion and is arranged next to each other in the arrangement direction with the emitter region.

13. The semiconductor device according to claim 1, wherein

the second-conductivity-type region is in contact with the trench portions.

14. The semiconductor device according to claim 1, wherein

a doping concentration in the second-conductivity-type region is higher than a doping concentration in the accumulation region in the non-channel mesa portion.