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PHOTODIODE AND METHOD OF MAKING THEREOF

  • US 20190312169A1
  • Filed: 04/05/2019
  • Published: 10/10/2019
  • Est. Priority Date: 04/09/2018
  • Status: Abandoned Application
First Claim
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1. A photodiode, comprising:

  • a semiconductor substrate, wherein protrusions and trenches are alternately patterned on a surface of the semiconductor substrate;

    a first doped layer disposed on the protrusions and trenches; and

    a second doped layer formed on an upper portion of the first doped layer, wherein the first and second doped layers comprise opposite polarity dopants.

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