LIGHT EMITTING DEVICE FOR LIGHT AMPLIFICATION USING GRAPHENE QUANTUM DOT AND METHOD FOR PRODUCING THE DEVICE

• US 20190312174A1
• Filed: 04/05/2019
• Published: 10/10/2019
• Est. Priority Date: 04/06/2018
• Status: Active Grant

• Current Assignee: Sangmyung University Industry-Academy Cooperation Foundation, University-Industry Cooperation Group of KyungHee University
• Original Assignee: Sangmyung University Industry-Academy Cooperation Foundation
• Inventors: HWANG, Sung Won, Choi, Suk Ho
• Granted Patent: US 10,873,004 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present invention relates to a light-emitting device for light amplification using graphene quantum dots and a method of manufacturing the same, which includes a first conductive semiconductor base layer; a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer sequentially formed from inside to outside; and a graphene quantum dot coating layer disposed on one or both of a surface and an interior of the nanowire, thereby providing a light-emitting device which maximizes light extraction and light amplification.

Claims

1. A light-emitting device comprising:

a first conductive semiconductor base layer;

a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer which are sequentially formed from inside to outside; and

a graphene quantum dot coating layer disposed on one or both of a surface and an interior of the nanowire.

2. The light-emitting device of claim 1, wherein an average size of graphene quantum dots of the graphene quantum dot coating layer is 100 nm or less.

3. The light-emitting device of claim 1, wherein 90% or more of total graphene quantum dots of the graphene quantum dot coating layer have a uniform particle size.

4. The light-emitting device of claim 1, wherein the first conductive semiconductor base layer and the first conductive semiconductor core include n-GaN.

5. The light-emitting device of claim 1, wherein the second conductive semiconductor layer includes p-GaN.

6. The light-emitting device of claim 1, wherein the active layer has a multi-quantum-well structure.

7. The light-emitting device of claim 6, wherein the graphene quantum dot coating layer is disposed in the multi-quantum-well structure.

8. A method of manufacturing a light-emitting device of claim 1, comprising:

forming a first conductive semiconductor base layer;

forming a plurality of nanowires including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer which are sequentially formed on the first conductive semiconductor base layer from inside to outside; and

forming a graphene quantum dot coating layer on one or both of a surface and an interior of the nanowire.

9. The method of claim 8, wherein the graphene quantum dot coating layer is formed through spray-coating.

10. The method of claim 8, wherein, in a case in which the graphene quantum dot coating layer is formed on the surface of the nanowire, the graphene quantum dot coating layer is formed after the nanowire is formed.

11. The method of claim 8, wherein, in a case in which the graphene quantum dot coating layer is formed inside the nanowire, the graphene quantum dot coating layer is formed at least once at least once among after the first conductive semiconductor core is formed and after the active layer is formed during the forming of the nanowire.

12. The method of claim 8, wherein, before the forming of the graphene quantum dot coating layer, a membrane filtering process of controlling material transmission according to a change in a molecular weight is performed to filter a graphene quantum dot having a specific size included in a liquid.

13. The method of claim 12, wherein the membrane filtering process includes a dialysis process.