METHOD OF FABRICATING LIGHT EMITTING DEVICE PACKAGE

• US 20190312182A1
• Filed: 06/17/2019
• Published: 10/10/2019
• Est. Priority Date: 08/11/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LIM, Wan Tae, SIM, Sung Hyun, YOO, Hanul, KIM, YONG IL, NOH, Hye Seok, YEON, Ji Hye
• Granted Patent: US 10,991,857 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

Claims

1. A method of fabricating a light emitting device package comprising in sequence:

(1) forming a plurality of semiconductor light emitting parts above a growth substrate, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer vertically stacked on the growth substrate;

(2) after forming the plurality of semiconductor light emitting parts, and while the plurality of light emitting parts are disposed below the growth substrate, forming a partition structure having a plurality of light emitting windows in the growth substrate, the partition structure including partitions formed of a portion of the growth substrate, and each partition formed between two adjacent semiconductor light emitting parts of the plurality of semiconductor light emitting parts in a plan view; and

(3) after forming the partition structure and while the plurality of light emitting parts are disposed below the growth substrate;

filling a resin having a wavelength conversion material into each of the plurality of light emitting windows; and

forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

2. The method of claim 1, wherein the filling the resin having the wavelength conversion material comprises:

dispensing a first resin having a first wavelength conversion material into a first light emitting window; and

dispensing a second resin into the first light emitting window on the first resin, the second resin having a second wavelength conversion material.

3. The method of claim 2, wherein the first wavelength conversion material comprises one of red, green, and blue wavelength conversion materials, and the second wavelength conversion material comprises red, green, and blue wavelength conversion materials.

4. The method of claim 3, further comprising:

forming a blue light blocking filter in the first light emitting window between the first resin and the second resin.

5. The method of claim 1, wherein the filling the resin having the wavelength conversion material comprises:

dispensing a first resin having a first wavelength conversion material into each of the plurality of light emitting windows; and

dispensing a second resin on the first resin,

wherein the second resin is transparent and does not include a wavelength conversion material in the second resin.

6. The method of claim 1, wherein a surface of the resin convexly protrudes before the planarizing of the surface of the resin.

7. The method of claim 1, wherein the filling the resin having the wavelength conversion material comprises:

dispensing a first resin into at least one of the plurality of light emitting windows; and

dispensing a second resin having the wavelength conversion material on the first resin,

wherein the first resin is transparent and is not mixed with a wavelength conversion material,

wherein a surface of the second resin convexly protrudes.

8. The method of claim 1, wherein the planarizing of the surface of the resin removes at least a portion of the partition structure.

9. The method of claim 8, wherein a remaining height of the partition structure is at least 32 μ

m or greater.

10. The method of claim 1, wherein the planarizing the surface of the resin is performed by at least one of grinding, polishing, or chemical mechanical polishing.

11. The method of claim 1, after the forming the plurality of wavelength conversion parts, further comprising:

disposing color filters on the plurality of wavelength conversion parts, respectively; and

coating an upper resin layer on the plurality of wavelength conversion parts to cover the color filters.

12. The method of claim 11, wherein the coating the upper resin layer is performed by spin coating.

13. The method of claim 11, wherein the upper resin layer is coated at a thickness of 50 μ

m or less.

14. A method of fabricating a light emitting device package comprising in sequence:

(1) forming a plurality of semiconductor light emitting parts above a growth substrate, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer vertically stacked on the growth substrate;

(2) after forming the plurality of semiconductor light emitting parts, and while the plurality of light emitting parts are disposed below the growth substrate, forming a partition structure having a plurality of light emitting windows corresponding respectively to the plurality of semiconductor light emitting parts in the growth substrate, the partition structure including partitions formed of a portion of the growth substrate, and each partition formed between two adjacent semiconductor light emitting parts of the plurality of semiconductor light emitting parts in a plan view; and

(3) after forming the partition structure and while the plurality of light emitting parts are disposed below the growth substrate;

dispensing a first resin having one of red, green, and blue wavelength conversion materials into each of the plurality of light emitting windows;

dispensing a second resin on the first resin in each of the plurality of light emitting windows, the second resin being transparent and not being mixed with a wavelength conversion material; and

forming a plurality of wavelength conversion parts by planarizing a surface of the second resin.

15. A method of manufacturing alight emitting device package comprising in sequence:

(1) forming a light emitting diode (LED) above a substrate;

(2) after forming the LED, and while the LED is below the substrate, forming a wavelength conversion part on the LED; and

(3) after forming the wavelength conversion part, planarizing a top surface of the wavelength conversion part by removing a portion of the wavelength conversion part,

wherein the wavelength conversion part comprises a first resin layer including a first wavelength conversion material, a second resin layer, and a light filter disposed between the first and second resin layers,

wherein the light emitting diode includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and

wherein the first and second semiconductor layers are doped with impurities, and the first and second semiconductor layers have opposite polarities from each other.

16. The method of claim 15, wherein the wavelength conversion part is configured to convert a wavelength of light emitted from the LED, and the wavelength conversion part comprises a wavelength conversion layer including a mixture of a wavelength conversion material and a first resin, and

wherein the planarizing a top surface of the wavelength conversion part comprises removing a portion of the wavelength conversion layer.

17. The method of claim 16, wherein the second resin layer comprises a transparent resin layer including a second resin, and the second resin is not mixed with a wavelength conversion material.

18. The method of claim 15, wherein the wavelength conversion part comprises a wavelength conversion layer and a transparent resin layer,

wherein the wavelength conversion layer comprises a mixture of a wavelength conversion material and a first resin,

wherein the transparent resin layer does not include a wavelength conversion material,

wherein the wavelength conversion layer is disposed between the transparent resin layer and the LED, and

wherein the planarizing a top surface of the wavelength conversion part comprises removing a portion of the transparent resin layer.

19. The method of claim 15, further comprising:

forming a light blocking structure surrounding the wavelength conversion part in a plan view.

20. The method of claim 19, wherein a portion of the light blocking structure is removed by the planarizing step, and a top surface of the light blocking structure and the top surface of the wavelength conversion part are coplanar after the planarizing step.