VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

• US 20190316274A1
• Filed: 06/26/2019
• Published: 10/17/2019
• Est. Priority Date: 08/28/2015
• Status: Active Grant

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: SATO, Yuusuke, TAKAHASHI, Hideshi, ITO, Hideki, HAYANO, Takanori
• Granted Patent: US 11,124,894 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 25/165 the flow of the reactive gases
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

Claims

1-8. -8. (canceled)

9. A vapor phase growth method comprising:

loading a plurality of substrates to n reactors;

distributing a predetermined amount of first process gas including a group-III element and starting the first process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a first flow rate;

distributing a predetermined amount of second process gas including a group-V element and starting second process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a second flow rate;

controlling independently at least one predetermined process parameter of the n reactors, on the basis of control values of the at least one predetermined process parameter, and growing films on the plurality of substrates in the n reactors at the same time;

shutting off the first process gas supply to the n reactors at the same time; and

shutting off the second process gas supply to the n reactors at the same time.

10. The vapor phase growth method according to claim 9, further comprising:

loading a plurality of test substrates to the n reactors,

distributing the predetermined amount of the first process gas and starting the first process gas supply to the n reactors at the same time at the flow rate controlled on the basis of the control value of the first flow rate,

distributing the predetermined amount of second process gas and starting the second process gas supply to the n reactors at the same time at the flow rate controlled on the basis of the control value of the second flow rate,

controlling the at least one predetermined process parameter on the basis of initial control values of the at least one predetermined process parameter, and growing films on the plurality of test substrates in the n reactors at the same time,

shutting off the first process gas supply to the n reactors at the same time,

shutting off the second process gas supply to the n reactors at the same time,

measuring characteristics of the films grown on the plurality of test substrates, and

calculating the control values of the at least one predetermined process parameter of the n reactors on the basis of the measured characteristics of the films.

11. The vapor phase growth method according to claim 9,

wherein the at least one predetermined process parameter is selected from concentration of the group-III element and the group-V element in process gas supplied to the n reactors, rotation speed of the substrates, temperature of the substrates, power of heater provided in each of the n reactors, and internal pressure of the reactors.

12. The vapor phase growth method according to claim 11,

wherein the at least one predetermined process parameter is the power of the heater or the temperature of the substrates, and

during the growing films, stop the growth of the film in at least one of the n reactors, the control value of the power of the heater or the temperature of the substrates in the at least one of the n reactors is set to be less than a control value when the film is grown on the substrate.

13. The vapor phase growth method according to claim 9,

wherein the film is a stacked film of an indium gallium nitride film and a gallium nitride film.

14. The vapor phase growth method according to claim 13,

wherein the at least one predetermined process parameter is the rotation speed of the substrate.

15. The vapor phase growth method according to claim 13,

wherein the at least one predetermined process parameter is temperature of the substrates.

16. The vapor phase growth method according to claim 9 further comprising:

obtaining information about a correlation between characteristics of a film including film thickness and film composition obtained in each of the n reactors and the at least one process parameter in advance; and

calculating the control values of the at least one process parameter from the obtained information for each of the n reactors.