SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND COMPUTER-READABLE RECORDING MEDIUM

• US 20190317407A1
• Filed: 04/05/2019
• Published: 10/17/2019
• Est. Priority Date: 04/11/2018
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: MIZUNOURA, Hiroshi, SANO, Yohei, KAWAKAMI, Shinichiro
• Granted Patent: US 10,955,743 B2
• Time in Patent Office: Days
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking

Abstract

There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.

Claims

1. A substrate processing apparatus, comprising:

a film forming part configured to form a metal-containing film on a front surface of a substrate;

a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and

a controller,

wherein the controller is configured to execute;

controlling the film forming part so as to form the metal-containing film on the front surface of the substrate;

controlling the film cleaning part so as to supply a first chemical liquid having a function of dissolving the metal-containing film to a first position in the peripheral edge portion of the substrate; and

controlling the film cleaning part so as to supply a second chemical liquid having a function of dissolving the metal-containing film to a second position in the peripheral edge portion of the substrate after the metal-containing film dissolved by the first chemical liquid is dried, the second position being closer to a periphery of the substrate than the first position.

2. The apparatus of claim 1, wherein the controller is further configured to execute:

rotating the substrate so as to dry the metal-containing film dissolved by the first chemical liquid after the first chemical liquid is supplied to the first position and before the second chemical liquid is supplied to the second position.

3. The apparatus of claim 1, further comprising:

a protection processing part configured to form a protective film on the peripheral edge portion of the substrate; and

a protective film cleaning part configured to clean the protective film formed on the peripheral edge portion of the substrate,

wherein the controller is further configured to execute;

controlling the protection processing part so as to form the protective film on the peripheral edge portion of the substrate before the metal-containing film is formed on the front surface of the substrate; and

controlling the protective film cleaning part so as to supply a third chemical liquid having a function of dissolving the protective film to the peripheral edge portion of the substrate after the second chemical liquid is supplied to the second position.

4. The apparatus of claim 3, wherein the controller is further configured to execute:

controlling the protective film cleaning part so as to supply a fourth chemical liquid having a function of dissolving the protective film and having a lower hydrogen ion concentration than a hydrogen ion concentration of the third chemical liquid to the peripheral edge portion of the substrate after the third chemical liquid is supplied to the peripheral edge portion of the substrate.

5. A substrate processing method, comprising:

forming a metal-containing film on a front surface of a substrate;

supplying a first chemical liquid having a function of dissolving the metal-containing film to a first position in a peripheral edge portion of the substrate; and

supplying a second chemical liquid having a function of dissolving the metal-containing film to a second position in the peripheral edge portion of the substrate, the second position being closer to a periphery of the substrate than the first position.

6. The method of claim 5, further comprising:

rotating the substrate so as to dry the metal-containing film dissolved by the first chemical liquid after the first chemical liquid is supplied to the first position and before the second chemical liquid is supplied to the second position.

7. The method of claim 5, further comprising:

forming a protective film on the peripheral edge portion of the substrate before the metal-containing film is formed on the front surface of the substrate; and

supplying a third chemical liquid having a function of dissolving the protective film to the peripheral edge portion of the substrate after the second chemical liquid is supplied to the second position.

8. The method of claim 7, further comprising:

supplying a fourth chemical liquid having a function of dissolving the protective film and having a lower hydrogen ion concentration than a hydrogen ion concentration of the third chemical liquid to the peripheral edge portion of the substrate after the third chemical liquid is supplied to the peripheral edge portion of the substrate.

9. A non-transitory computer-readable storage medium storing a program that causes a substrate processing apparatus to execute the method of claim 5.