METHOD AND APPARATUS FOR PROCESSING SUBSTRATE

• US 20190317408A1
• Filed: 04/10/2019
• Published: 10/17/2019
• Est. Priority Date: 04/16/2018
• Status: Active Application

• Current Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Original Assignee: Semes Co., Ltd (Samsung Electronics Co. Ltd.)
• Inventors: GOO, HEEJAE, YOON, KYO SANG, CHOI, BYOUNGDOO, YANG, SANGMO
• Application Number:
  US16/380,785
• Publication Number:
  US 20190317408A1
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/67178 vertical arrangement

Abstract

The inventive concept relates to a substrate processing method and apparatus for providing a plurality of gas layers and contamination prevention liquid layers in a nozzle after the nozzle dispenses photoresist onto a substrate, thereby preventing photoresist in the nozzle from making contact with air and thus preventing the photoresist in the nozzle from being solidified by a reaction of the photoresist with air.

Claims

1. A method for processing a substrate, the method comprising:

a process of processing the substrate by dispensing a processing liquid onto the substrate through a nozzle having a discharge passage formed therein; and

a storage process of storing the nozzle, with the processing liquid sucked back into the discharge passage,

wherein in the storage process, the nozzle is stored, with a first gas layer, a first contamination prevention liquid layer, a second gas layer, and a second contamination prevention liquid layer sequentially formed in the discharge passage, and

wherein the first gas layer is located adjacent to the processing liquid.

2. The method of claim 1, wherein a third gas layer is additionally formed between the second contamination prevention liquid layer and an end of the nozzle.

3. The method of claim 1, wherein the processing liquid is photoresist.

4. The method of claim 3, wherein the first gas layer and the second gas layer are air layers.

5. The method of claim 3, wherein the first contamination prevention liquid layer and the second contamination prevention liquid layer are thinner layers.

6. A method for processing a substrate, the method comprising:

a step of processing the substrate by dispensing a processing liquid onto the substrate through a nozzle;

a first gas layer forming step of forming a first gas layer in an end of a discharge passage of the nozzle by sucking back the processing liquid in the discharge passage of the nozzle;

a first liquid layer forming step of forming a first contamination prevention liquid layer in the discharge passage of the nozzle by pulling a first contamination prevention liquid into the discharge passage of the nozzle from the outside by applying a suction force to the discharge passage of the nozzle, after the first gas layer forming step;

a second gas layer forming step of forming a second gas layer in the discharge passage of the nozzle by applying a suction force to the passage of the nozzle, after the first liquid layer forming step; and

a second liquid layer forming step of forming a second contamination prevention liquid layer in the discharge passage of the nozzle by pulling a second contamination prevention liquid into the discharge passage of the nozzle from the outside by applying a suction force to the discharge passage of the nozzle, after the second gas layer forming step.

7. The method of claim 6, further comprising:

a third gas layer forming step of forming a third gas layer in the discharge passage of the nozzle by applying a suction force to the passage of the nozzle, after the second liquid layer forming step.

8. The method of claim 6, wherein the processing liquid is photoresist.

9. The method of claim 8, wherein the first gas layer and the second gas layer are air.

10. The method of claim 6, wherein the first contamination prevention liquid and the second contamination prevention liquid are thinner.

11. The method of claim 6, wherein each of the first liquid layer forming step and the second liquid layer forming step is performed, with a predetermined level of liquid in a home port in which the nozzle stands by and a discharge end of the nozzle submerged in the liquid, and

wherein each of the first gas layer forming step and the second gas layer forming step is performed, with the discharge end of the nozzle located above a surface of the liquid in the home port in which the nozzle stands by.

12. The method of claim 11, wherein the first gas layer forming step is performed in a processing space in which the processing liquid is dispensed onto the substrate to process the substrate.

13. An apparatus for processing a substrate, the apparatus comprising:

a cup having a processing space therein, in which the substrate is processed;

a support unit configured to support the substrate in the processing space;

a liquid dispensing unit including a nozzle configured to dispense a processing liquid onto the substrate supported on the support unit;

a home port configured to store the nozzle while the nozzle does not dispense the processing liquid onto the substrate; and

a controller configured to control the liquid dispensing unit,

wherein the liquid dispensing unit includes;

the nozzle having a discharge passage formed therein;

a liquid supply tube configured to supply the processing liquid into the nozzle; and

a suck-back valve installed on the liquid supply tube and configured to apply a suction force to the discharge passage,

wherein the controller controls the suck-back valve to apply the suction force to the discharge passage of the nozzle to sequentially form a first gas layer, a first contamination prevention liquid layer, a second gas layer, and a second contamination prevention liquid layer in the nozzle while the nozzle is stored in the home port, and

wherein the first gas layer is located adjacent to the processing liquid.

14. The apparatus of claim 13, wherein the controller controls the liquid dispensing unit to form the first gas layer while the nozzle is located in or above the processing space.

15. The apparatus of claim 13, wherein the controller controls the liquid dispensing unit to form the first contamination prevention liquid layer, the second gas layer, and the second contamination prevention liquid layer in the discharge passage, with the nozzle located in the home port.

16. The apparatus of claim 13, wherein the controller applies a suction force to the discharge passage of the nozzle to form a third gas layer between the second contamination prevention liquid layer and a discharge opening of the nozzle.

17. The apparatus of claim 13, wherein the first gas layer, the second gas layer, and the third gas layer are air, and

wherein the first contamination prevention liquid layer and the second contamination prevention liquid layer are thinner.

18. The apparatus of claim 13, wherein the home port includes:

a body having a space in which the nozzle is received;

a supply line configured to supply a contamination prevention liquid into the body; and

a drain line configured to drain the contamination prevention liquid from the body.