IRON-ALUMINUM ALLOY MAGNETIC THIN FILM

• US 20190318860A1
• Filed: 04/20/2017
• Published: 10/17/2019
• Est. Priority Date: 10/27/2016
• Status: Abandoned Application

• Current Assignee: TDK Corporation, Board of Trustees of The University of Alabama (University of Alabama System)
• Original Assignee: TDK Corporation, Board of Trustees of The University of Alabama (University of Alabama System)
• Inventors: SUZUKI, Takao, MEWES, Tim, MANKEY, Gary J., KANADA, Isao, ARIAKE, Yusuke
• Application Number:
  US16/345,351
• Publication Number:
  US 20190318860A1
• Time in Patent Office: Days
• CPC Class Codes: C22C 2202/02 Magnetic
• CPC Class Codes: C22C 38/06 containing aluminium
• CPC Class Codes: C22C 38/10 containing cobalt
• CPC Class Codes: C23C 14/165 by cathodic sputtering
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C30B 23/025 characterised by the substrate
• CPC Class Codes: C30B 29/52 Alloys
• CPC Class Codes: G11B 5/656 containing Co containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658
• CPC Class Codes: H01F 10/08 characterised by magnetic layers H01F10/32 takes precedence ; applying thin magnetic films to substrates H01F41/14
• CPC Class Codes: H01F 10/14 containing iron or nickel H01F10/126 , H01F10/13, H01F10/16 take precedence
• CPC Class Codes: H01F 41/18 by cathode sputtering

Abstract

An Fe—Al alloy magnetic thin film according to the present invention contains, in terms of atomic ratio, 0% to 35% (inclusive of 0%) of Co and 1.5% to 2% of Al. A direction of a crystal contained in a material is perpendicular to a substrate surface and a crystallite size is 150 Å or less. Methods of making and using said thin film are also disclosed.

Claims

1. An Fe—

Al alloy magnetic thin film, comprising;

in terms of atomic ratio, 0% to 35% of Co; and

1.5% to 2% of Al, wherein a <

110>

direction of a crystal contained in a material is perpendicular to a substrate surface and a crystallite size is 150 Å

or less.

2. The alloy magnetic thin film of claim 1, wherein the amount of Co is 0%.

3. The alloy magnetic thin film of claim 1, wherein Co is present at from 5% to 15%.

4. The alloy magnetic thin film of claim 1, wherein Co is present at from 10% to 20%.

5. The alloy magnetic thin film of claim 1, wherein Co is present at from 15% to 25%.

6. The alloy magnetic thin film of claim 1, wherein Co is present at from 20% to 30%.

7. The alloy magnetic thin film of claim 1, wherein Co is present at from 25% to 35%.

8. The alloy magnetic thin film of claim 1, wherein the substrate comprises a metal, glass, silicon, or ceramic.

9. The alloy magnetic thin film of claim 1, wherein the substrate comprises MgO or SiO₂.

10. The alloy magnetic thin film of claim 1, wherein the crystallite size is 140 Å

or less.

13. The alloy magnetic thin film of claim 1, further comprising a protective layer comprising Mo, W, Ru, or Ta on top of the thin film.

14. The alloy magnetic thin film of claim 1, wherein the thin film comprises a plurality of Al layers.

15. The alloy magnetic thin film of claim 14, wherein the Al layers are each 0.4 Å

thick.

16. The alloy magnetic thin film of claim 1, wherein the thin film comprises a plurality of Fe or Fe—

Co layers.

17. The alloy magnetic thin film of claim 16, wherein the Fe or Fe—

Co layers are each from 0 to 1.8 Å

thick.

11. (canceled)

12. (canceled)

18. A method of preparing an Fe—

Al alloy magnetic thin film, comprising;

depositing a target material comprising one or more of Fe, Co, and Al onto a substrate by sputtering,

wherein the Fe—

Al alloy magnetic thin film comprises, in terms of atomic ratio, 0% to 35% of Co; and

1.5% to 2% of Al, wherein a <

110>

direction of a crystal contained in a material is perpendicular to the substrate surface and with a crystallite size is 150 Å

or less.

19. The method of claim 18, wherein the target material is chosen from Fe, Co, Al, Fe—

Co—

Al alloy, Fe—

Co alloy, Fe—

Al alloy, and Co—

Al alloy.

20. The method of claim 18, wherein the substrate is heated during sputtering.

21. The method of claim 18, wherein the substrate is at ambient temperature during sputtering.

22. The method of claim 18, wherein the substrate comprises a metal, glass, silicon, or ceramic.

23. The method of claim 18, wherein the substrate comprises MgO or SiO₂.

24. The method of claim 18, further comprising providing a protective layer of Mo, W, Ru, or Ta on top of the magnetic thin film.

25. The method of claim 18, wherein the sputtering is magnetron sputtering.