PLASMA PROCESSING APPARATUS
First Claim
1. A plasma processing apparatus comprising:
- a chamber;
a radio-frequency power supply;
an electrode electrically connected to the radio-frequency power supply in order to generate plasma in the chamber; and
a matching device connected between the radio-frequency power supply and the electrode,wherein the radio-frequency power supply outputs radio-frequency power generated such that a power level during a first period is higher than a power level during a second period alternating with the first period,the matching device sets a load side impedance of the radio-frequency power supply during a monitoring period within the first period to an impedance that differs from an output impedance of the radio-frequency power supply, the monitoring period is a period starting after a predetermined time length elapses from a start point of the first period, andthe radio-frequency power supply adjusts the power level of the radio-frequency power such that a load power level, which is a difference between a power level of a traveling wave and a power level of a reflected wave, becomes a designated power level.
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Accused Products
Abstract
A plasma processing apparatus includes a radio-frequency power supply that outputs modulated radio-frequency power which is generated such that a power level during a first period is higher than a power level during a second period that alternates with the first period. The plasma processing apparatus also includes a matching device that sets a load side impedance of the radio-frequency power supply during a monitoring period within the first period to an impedance that differs from an output impedance of the radio-frequency power supply. The monitoring period starts after a predetermined time length elapses from a start point of the first period. The radio-frequency power supply adjusts the power level of the modulated radio-frequency power such that a load power level, which is a difference between a power level of a traveling wave and a power level of a reflected wave, becomes a designated power level.
3 Citations
3 Claims
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1. A plasma processing apparatus comprising:
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a chamber; a radio-frequency power supply; an electrode electrically connected to the radio-frequency power supply in order to generate plasma in the chamber; and a matching device connected between the radio-frequency power supply and the electrode, wherein the radio-frequency power supply outputs radio-frequency power generated such that a power level during a first period is higher than a power level during a second period alternating with the first period, the matching device sets a load side impedance of the radio-frequency power supply during a monitoring period within the first period to an impedance that differs from an output impedance of the radio-frequency power supply, the monitoring period is a period starting after a predetermined time length elapses from a start point of the first period, and the radio-frequency power supply adjusts the power level of the radio-frequency power such that a load power level, which is a difference between a power level of a traveling wave and a power level of a reflected wave, becomes a designated power level. - View Dependent Claims (2, 3)
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Specification