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PLASMA PROCESSING APPARATUS

  • US 20190318912A1
  • Filed: 04/12/2019
  • Published: 10/17/2019
  • Est. Priority Date: 04/12/2018
  • Status: Active Application
First Claim
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1. A plasma processing apparatus comprising:

  • a chamber;

    a radio-frequency power supply;

    an electrode electrically connected to the radio-frequency power supply in order to generate plasma in the chamber; and

    a matching device connected between the radio-frequency power supply and the electrode,wherein the radio-frequency power supply outputs radio-frequency power generated such that a power level during a first period is higher than a power level during a second period alternating with the first period,the matching device sets a load side impedance of the radio-frequency power supply during a monitoring period within the first period to an impedance that differs from an output impedance of the radio-frequency power supply, the monitoring period is a period starting after a predetermined time length elapses from a start point of the first period, andthe radio-frequency power supply adjusts the power level of the radio-frequency power such that a load power level, which is a difference between a power level of a traveling wave and a power level of a reflected wave, becomes a designated power level.

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