Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same

• US 20190318925A1
• Filed: 04/03/2019
• Published: 10/17/2019
• Est. Priority Date: 04/11/2018
• Status: Abandoned Application

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Inventors: Lei, Xinjian, Wang, Meiliang, Rao, Madhukar B.
• Application Number:
  US16/373,919
• Publication Number:
  US 20190318925A1
• Time in Patent Office: Days
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

as described herein.

Claims

1. A composition comprising an monoorganoaminodisilane represented by the structure of Formula I:

2. The composition of claim 1 wherein the R¹ and R² are linked together to form a ring.

3. The composition of claim 1 wherein R^3-5 are each independently selected from hydrogen, methyl or ethyl.

4. The composition of claim 3 wherein the monoorganoaminodisilane is selected from the group consisting of 1-dimethylamino-2,2,2-trimethyldisilane, 1-diethylamino-2,2,2-trimethyldisilane, 1-ethylmethylamino-2,2,2-trimethyldisilane, 1-di-n-propylamino-2,2,2-trimethyldisilane, 1-di-iso-propylamino-2,2,2-trimethyldisilane, 1-di-sec-butylamino-2,2,2-trimethyldisilane, 1-di-iso-butylamino-2,2,2-trimethyldisilane, 1-dimethylamino-2,2-dimethyldisilane, 1-diethylamino-2,2-dimethyldisilane, 1-ethylmethylamino-2,2-dimethyldisilane, 1-di-n-propylamino-2,2-dimethyldisilane, 1-di-iso-propylamino-2,2-dimethyldisilane, 1-di-n-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-sec-butylamino-2,2-dimethyldisilane, 1-dimethylamino-2-methyldisilane, 1-diethylamino-2-methyldisilane, 1-di-n-propylamino-2-methyldisilane, 1-di-iso-propylamino-2-methyldisilane, 1-di-n-butylamino-2-methyldisilane, 1-di-iso-butylamino-2-methyldisilane, 1-di-sec-butylamino-2-methyldisilane, 1-dimethylamino-2,2,2-triethyldisilane, 1-diethylamino-2,2,2-triethyldisilane, 1-di-iso-propylamino-2,2,2-triethyldisilane, 1-di-sec-butylamino-2,2,2-triethyldisilane, 1-dimethylamino-2,2-diethyldisilane, 1-diethylamino-2,2-diethyldisilane, 1-pyrrolidino-2,2,2-trimethyldisilane, 1-piperidino-2,2,2-trimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2,2-trimethyldisilane, 1-2,6-dimethylpiperidino-2,2,2-trimethyldisilane, 1-pyrrolidino-2,2-dimethyldisilane, 1-piperidino-2,2-dimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-dimethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-methyldisilane, 1-piperidino-2-methyldisilane, 1-2,5-dimethylpyrrolidino-2-methyldisilane, 1-2,6-dimethylpiperidino-2-methyldisilane, 1-pyrrolidino-2,2-diethyldisilane, 1-piperidino-2,2-diethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-diethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-ethyldisilane, 1-piperidino-2-ethyldisilane, 1-2,5-dimethylpyrrolidino-2-ethyldisilane, and 1-2,6-dimethylpiperidino-2-ethyldisilane.

5. The composition of claim 1 wherein the halide ions are chloride ions.

6. The composition of claim 1 which comprises less than 5 ppm of chloride ions.

7. The composition of claim 1 which comprises less than 3 ppm of chloride ions.

8. The composition of claim 1 which comprises less than 1 ppm of chloride ions.

9. A composition comprising:

(a) at least one monoorganoaminodisilane represented by Formula I;

10. The composition of claim 9 wherein the monoorganoaminodisilane precursor comprises at least one selected from the group consisting of 1-dimethylamino-2,2,2-trimethyldisilane, 1-diethylamino-2,2,2-trimethyldisilane, 1-ethylmethylamino-2,2,2-trimethyldisilane, 1-di-n-propylamino-2,2,2-trimethyldisilane, 1-di-iso-propylamino-2,2,2-trimethyldisilane, 1-di-sec-butylamino-2,2,2-trimethyldisilane, 1-di-iso-butylamino-2,2,2-trimethyldisilane, 1-dimethylamino-2,2-dimethyldisilane, 1-diethylamino-2,2-dimethyldisilane, 1-ethylmethylamino-2,2-dimethyldisilane, 1-di-n-propylamino-2,2-dimethyldisilane, 1-di-iso-propylamino-2,2-dimethyldisilane, 1-di-n-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-sec-butylamino-2,2-dimethyldisilane, 1-dimethylamino-2-methyldisilane, 1-diethylamino-2-methyldisilane, 1-di-n-propylamino-2-methyldisilane, 1-di-iso-propylamino-2-methyldisilane, 1-di-n-butylamino-2-methyldisilane, 1-di-iso-butylamino-2-methyldisilane, 1-di-sec-butylamino-2-methyldisilane, 1-dimethylamino-2,2,2-triethyldisilane, 1-diethylamino-2,2,2-triethyldisilane, 1-di-iso-propylamino-2,2,2-triethyldisilane, 1-di-sec-butylamino-2,2,2-triethyldisilane, 1-dimethylamino-2,2-diethyldisilane, 1-diethylamino-2,2-diethyldisilane, 1-pyrrolidino-2,2,2-trimethyldisilane, 1-piperidino-2,2,2-trimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2,2-trimethyldisilane, 1-2,6-dimethylpiperidino-2,2,2-trimethyldisilane, 1-pyrrolidino-2,2-dimethyldisilane, 1-piperidino-2,2-dimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-dimethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-methyldisilane, 1-piperidino-2-methyldisilane, 1-2,5-dimethylpyrrolidino-2-methyldisilane, 1-2,6-dimethylpiperidino-2-methyldisilane, 1-pyrrolidino-2,2-diethyldisilane, 1-piperidino-2,2-diethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-diethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-ethyldisilane, 1-piperidino-2-ethyldisilane, 1-2,5-dimethylpyrrolidino-2-ethyldisilane, and 1-2,6-dimethylpiperidino-2-ethyldisilane.

11. The composition of claim 9 wherein the solvent comprises at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.

12. A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:

providing the at least one surface of the substrate in a reaction chamber;

introducing at least one monoorganoaminodisilane having a structure of Formula I;

13. The method of claim 12 wherein the at least one monoorganoaminodisilane is selected from the group consisting of 1-dimethylamino-2,2,2-trimethyldisilane, 1-diethylamino-2,2,2-trimethyldisilane, 1-ethylmethylamino-2,2,2-trimethyldisilane, 1-di-n-propylamino-2,2,2-trimethyldisilane, 1-di-iso-propylamino-2,2,2-trimethyldisilane, 1-di-sec-butylamino-2,2,2-trimethyldisilane, 1-di-iso-butylamino-2,2,2-trimethyldisilane, 1-dimethylamino-2,2-dimethyldisilane, 1-diethylamino-2,2-dimethyldisilane, 1-ethylmethylamino-2,2-dimethyldisilane, 1-di-n-propylamino-2,2-dimethyldisilane, 1-di-iso-propylamino-2,2-dimethyldisilane, 1-di-n-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-sec-butylamino-2,2-dimethyldisilane, 1-dimethylamino-2-methyldisilane, 1-diethylamino-2-methyldisilane, 1-di-n-propylamino-2-methyldisilane, 1-di-iso-propylamino-2-methyldisilane, 1-di-n-butylamino-2-methyldisilane, 1-di-iso-butylamino-2-methyldisilane, 1-di-sec-butylamino-2-methyldisilane, 1-dimethylamino-2,2,2-triethyldisilane, 1-diethylamino-2,2,2-triethyldisilane, 1-di-iso-propylamino-2,2,2-triethyldisilane, 1-di-sec-butylamino-2,2,2-triethyldisilane, 1-dimethylamino-2,2-diethyldisilane, 1-diethylamino-2,2-diethyldisilane, 1-pyrrolidino-2,2,2-trimethyldisilane, 1-piperidino-2,2,2-trimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2,2-trimethyldisilane, 1-2,6-dimethylpiperidino-2,2,2-trimethyldisilane, 1-pyrrolidino-2,2-dimethyldisilane, 1-piperidino-2,2-dimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-dimethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-methyldisilane, 1-piperidino-2-methyldisilane, 1-2,5-dimethylpyrrolidino-2-methyldisilane, 1-2,6-dimethylpiperidino-2-methyldisilane, 1-pyrrolidino-2,2-diethyldisilane, 1-piperidino-2,2-diethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-diethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-ethyldisilane, 1-piperidino-2-ethyldisilane, 1-2,5-dimethylpyrrolidino-2-ethyldisilane, and 1-2,6-dimethylpiperidino-2-ethyldisilane.

14. The method of claim 12 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof. (would we ever make plasma from hydrazine or its derivatives?)

15. The method of claim 12 wherein the silicon-containing film is selected from the group consisting of silicon nitride and silicon carbonitride.

16. A method of forming a silicon-containing film wherein the film is selected from an amorphous and a crystalline film from a deposition process selected from by plasma enhanced atomic layer deposition and plasma enhanced cyclic chemical vapor deposition, the method comprising:

placing one or more substrates into a reactor which is heated to a one or more temperatures ranging from ambient temperature to about 700°

C.;

introducing at least one monoorganoaminodisilane precursor comprising a compound having Formula I below;

17. The method of claim 16 wherein the plasma source is selected from the group consisting of a plasma comprising hydrogen and argon, a plasma comprising hydrogen and helium plasma, an argon plasma, a helium plasma, and mixtures thereof.

18. The method of claim 16 wherein the at least one monoorganoaminodisilane is selected from the group consisting of 1-dimethylamino-2,2,2-trimethyldisilane, 1-diethylamino-2,2,2-trimethyldisilane, 1-ethylmethylamino-2,2,2-trimethyldisilane, 1-di-n-propylamino-2,2,2-trimethyldisilane, 1-di-iso-propylamino-2,2,2-trimethyldisilane, 1-di-sec-butylamino-2,2,2-trimethyldisilane, 1-di-iso-butylamino-2,2,2-trimethyldisilane, 1-dimethylamino-2,2-dimethyldisilane, 1-diethylamino-2,2-dimethyldisilane, 1-ethylmethylamino-2,2-dimethyldisilane, 1-di-n-propylamino-2,2-dimethyldisilane, 1-di-iso-propylamino-2,2-dimethyldisilane, 1-di-n-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-iso-butylamino-2,2-dimethyldisilane, 1-di-sec-butylamino-2,2-dimethyldisilane, 1-dimethylamino-2-methyldisilane, 1-diethylamino-2-methyldisilane, 1-di-n-propylamino-2-methyldisilane, 1-di-iso-propylamino-2-methyldisilane, 1-di-n-butylamino-2-methyldisilane, 1-di-iso-butylamino-2-methyldisilane, 1-di-sec-butylamino-2-methyldisilane, 1-dimethylamino-2,2,2-triethyldisilane, 1-diethylamino-2,2,2-triethyldisilane, 1-di-iso-propylamino-2,2,2-triethyldisilane, 1-di-sec-butylamino-2,2,2-triethyldisilane, 1-dimethylamino-2,2-diethyldisilane, 1-diethylamino-2,2-diethyldisilane, 1-pyrrolidino-2,2,2-trimethyldisilane, 1-piperidino-2,2,2-trimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2,2-trimethyldisilane, 1-2,6-dimethylpiperidino-2,2,2-trimethyldisilane, 1-pyrrolidino-2,2-dimethyldisilane, 1-piperidino-2,2-dimethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-dimethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-methyldisilane, 1-piperidino-2-methyldisilane, 1-2,5-dimethylpyrrolidino-2-methyldisilane, 1-2,6-dimethylpiperidino-2-methyldisilane, 1-pyrrolidino-2,2-diethyldisilane, 1-piperidino-2,2-diethyldisilane, 1-2,5-dimethylpyrrolidino-2,2-diethyldisilane, 1-2,6-dimethylpiperidino-2,2-dimethyldisilane, 1-pyrrolidino-2-ethyldisilane, 1-piperidino-2-ethyldisilane, 1-2,5-dimethylpyrrolidino-2-ethyldisilane, and 1-2,6-dimethylpiperidino-2-ethyldisilane.