SPACER IMAGE TRANSFER WITH DOUBLE MANDREL
First Claim
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1. A patterning method for microelectronic devices comprising:
- forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop the surface to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer;
patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer; and
forming a sidewall spacer on sidewalls of the double mandrel structures.
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Abstract
A method for providing an etch mask for microelectronic processing that includes forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop the surface to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer. If a following step, the material stack may be patterned and etched to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer. A sidewall spacer is formed on sidewalls of the double mandrel structures.
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Citations
20 Claims
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1. A patterning method for microelectronic devices comprising:
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forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop the surface to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer; patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer; and forming a sidewall spacer on sidewalls of the double mandrel structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A patterning method for microelectronic devices comprising:
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forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop dielectric layers to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer; patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer; forming a sidewall spacer on sidewalls of the double mandrel structures; etching trenches in the dielectric layers using the double mandrel structures and sidewall spacers; and filling the trenches with an electrically conductive material to provide metal lines. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A patterning method for microelectronic devices comprising:
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forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop semiconductor layers to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer; patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer; forming a sidewall spacer on sidewalls of the double mandrel structures; and etching fins in the semiconductors layers using the double mandrel structures and sidewall spacers. - View Dependent Claims (17, 18, 19, 20)
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Specification