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Post UV Cure for Gapfill Improvement

  • US 20190318932A1
  • Filed: 06/24/2019
  • Published: 10/17/2019
  • Est. Priority Date: 03/14/2018
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, the method comprising:

  • performing a first deposition process to form a layer of a first material in a trench, the trench being between a first structure and a second structure;

    performing an etch process to remove a portion of the first material along an upper portion of sidewall surfaces of the trench;

    repeating the first deposition process and the etch process one or more times, wherein the trench is filled after repeating the first deposition process and the etch process one or more times;

    curing the first material; and

    after curing the first material, performing a second deposition process to form the first material to a first depth above an upper surface of the first structure and the second structure.

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