Post UV Cure for Gapfill Improvement
First Claim
1. A method for semiconductor processing, the method comprising:
- performing a first deposition process to form a layer of a first material in a trench, the trench being between a first structure and a second structure;
performing an etch process to remove a portion of the first material along an upper portion of sidewall surfaces of the trench;
repeating the first deposition process and the etch process one or more times, wherein the trench is filled after repeating the first deposition process and the etch process one or more times;
curing the first material; and
after curing the first material, performing a second deposition process to form the first material to a first depth above an upper surface of the first structure and the second structure.
0 Assignments
0 Petitions
Accused Products
Abstract
Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.
-
Citations
20 Claims
-
1. A method for semiconductor processing, the method comprising:
-
performing a first deposition process to form a layer of a first material in a trench, the trench being between a first structure and a second structure; performing an etch process to remove a portion of the first material along an upper portion of sidewall surfaces of the trench; repeating the first deposition process and the etch process one or more times, wherein the trench is filled after repeating the first deposition process and the etch process one or more times; curing the first material; and after curing the first material, performing a second deposition process to form the first material to a first depth above an upper surface of the first structure and the second structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for semiconductor processing, the method comprising:
-
forming fins on a substrate, sidewalls of the fins and a bottom surface between the sidewalls of the fins defining a trench therebetween; forming a semiconductor layer in the trench and over the fins, forming the semiconductor layer comprising; performing a plurality of first deposition cycles and a plurality of etch cycles, each of the first deposition cycles being followed by an etch cycle of the plurality of etch cycles; after performing the plurality of first deposition cycles and the plurality of etch cycles, curing the semiconductor layer; and after curing, performing a second deposition cycle. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for semiconductor processing, the method comprising:
-
forming a trench interposed between a first fin and a second fin; forming a semiconductor layer over the first fin and the second fin, wherein forming the semiconductor layer comprises; performing a first deposition process to form a layer of a first material in the trench; performing an etch process to remove a portion of the first material in the trench; repeating the first deposition process and the etch process one or more times; curing the first material to reduce a number of voids in the first material; and after curing the first material, performing a second deposition process to form another layer of the first material. - View Dependent Claims (18, 19, 20)
-
Specification